TFT-Integrated Light Detection Structure for High Aperture Ratio
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Solution Overview
Problem
Existing semiconductor devices face challenges in efficiently integrating light detection with thin film transistors while maintaining a high aperture ratio.
Innovation Solution
A semiconductor device is fabricated with a thin film transistor and adjacent light detection structures, including bottom and top electrodes with photosensitive portions, where one of the source or drain electrodes of the transistor is integrated as the bottom electrode, and the other as the top electrode, with spacing layers to optimize light detection area without affecting the aperture ratio.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If light detection structure is integrated with thin film transistor, then light detection area is increased, but aperture ratio is reduced
Solution Approach 1:
The light detection structure is merged with the thin film transistor by sharing the source and drain electrodes as bottom and top electrodes of the light detection structure, respectively. This integration allows the light detection function to be incorporated within the existing transistor structure, increasing the light detection area without proportionally increasing the overall device area, thus maintaining a high aperture ratio.
Solution Approach 2:
The light detection structure extends in the vertical dimension between the source and drain electrodes of the thin film transistor. By utilizing the space between these electrodes for light detection, the patent increases the light detection area in three-dimensional space without occupying additional planar area, thereby preserving the aperture ratio.
2Device complexity
If light detection structure is integrated with thin film transistor, then device complexity is reduced, but manufacturing precision is reduced
Solution Approach 1:
The light detection structure is merged with the thin film transistor by sharing the source and drain electrodes as bottom and top electrodes of the light detection structure, respectively. This integration allows the light detection function to be incorporated within the existing transistor structure, increasing the light detection area without proportionally increasing the overall device area, thus maintaining a high aperture ratio.
Solution Approach 2:
The light detection structure extends in the vertical dimension between the source and drain electrodes of the thin film transistor. By utilizing the space between these electrodes for light detection, the patent increases the light detection area in three-dimensional space without occupying additional planar area, thereby preserving the aperture ratio.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This integration enables efficient light detection without additional equipment, reduces fabrication costs, and increases the aperture ratio, supporting applications like fingerprint identification and external light source intensity detection.
Implementation Method 1
a first photosensitive portion disposed between the first bottom electrode and the first top electrode
Data Source
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AI summary
The present disclosure relates to a semiconductor device, an array substrate, and a method for fabricating the semiconductor device. The semiconductor device comprises a substrate, a thin film transistor formed on the substrate, and a first light detection structure adjacent to the thin film transistor, wherein the first light detection structure includes a first bottom electrode, a first top electrode, and a first photo-sensing portion disposed between the first bottom electrode and the first top electrode, one of a source electrode and a drain electrode of the thin film transistor is disposed in the same layer as the first bottom electrode of the first light detection structure;;the other of the source electrode and the drain electrode of the thin film transistor is used as the first top electrode.