Thin Film Transistor Light Shielding Structure

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Solution Overview

Problem

Thin film transistors used in display devices are degraded by unwanted light, leading to changes in their characteristics, as they are not effectively protected from incident light.

Innovation Solution

A thin film transistor with a light shielding structure is designed, featuring a light shield layer with inclined surfaces that blocks incident light, and a semiconductor layer and gate electrode configuration that prevents light from affecting the transistor's operation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a conventional thin film transistor structure is used, then the device can be manufactured with standard processes, but the transistor characteristics are degraded by unwanted incident light

Engineering Contradiction:
Improvetransistor characteristic stabilityVSAvoidlight degradation
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

A light shielding layer is introduced as an intermediary component between the substrate and the transistor structure. This layer specifically blocks unwanted light wavelengths from reaching the transistor, preventing light-induced degradation while allowing the transistor to maintain its electrical characteristics and reliability

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The light shielding structure is segmented into multiple inclined surfaces rather than a single flat layer. This segmentation allows the structure to block light from multiple angles and directions, providing comprehensive protection while maintaining compatibility with standard manufacturing processes

Inventive Principle:
Principle #1Segmentation

2Reliability

If a light shielding structure is added to protect the transistor, then light degradation is prevented, but the device complexity increases

Engineering Contradiction:
Improveprotection from light degradationVSAvoidstructure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The light shielding layer is merged with the existing transistor fabrication process flow. The inclined surfaces are formed using standard deposition and etching techniques that are already part of the manufacturing process, thereby adding protection functionality without significantly increasing overall device complexity

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The light shielding structure serves multiple functions: it blocks unwanted light, provides a platform for subsequent spacer and electrode formation, and can be integrated with various transistor configurations. This multi-functionality reduces the need for additional separate components, maintaining manufacturing efficiency

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The light shielding structure effectively prevents light from degrading the transistor, allowing it to function as an optical sensor and maintain performance by blocking specific wavelengths and directions of light, ensuring reliable operation in various lighting conditions.

Implementation Method 1

a light shield layer intervened between the first spacer and the second spacer... the light shielding structure effectively prevents light from degrading the transistor

Methodology Applied
Scientific EffectLight blocking: Absorption (EM radiation)

Data Source

PatentUS10825932B2Thin film transistor having light shielding structure
Publication Date: 2020.11.03 ELECTRONICS & TELECOMM RES INST
  • US10825932B2 patent drawing
  • US10825932B2 patent drawing
  • US10825932B2 patent drawing

AI summary

Provided is a thin film transistor including a substrate, a first spacer on the substrate, a second spacer on the first spacer, a light shield layer intervened between the first spacer and the second spacer, a semiconductor layer on the second spacer, and a gate electrode on the semiconductor layer, wherein the light shield layer includes a plurality of inclined surfaces against a top surface of the substrate.