Thin-Film Transistor Light-Shield Layout With Single-Mask Patterning
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Solution Overview
Problem
The manufacturing process of thin film transistor display devices is complex and costly due to the need for multiple patterning processes and expensive masks to form the source, drain, and light shielding layers, which are typically formed separately.
Innovation Solution
The light shielding layer and source/drain electrodes of thin film transistors are integrated into a single material layer, allowing them to be formed through a single patterning process, reducing the number of masks and simplifying the manufacturing process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If separate patterning processes are used to form source electrode, drain electrode and light shielding layer, then each component can be precisely formed, but the manufacturing process becomes complex and costly with multiple masks
Solution Approach 1:
The patent merges the source electrode, drain electrode, and light shielding layer into a single integrated conductive layer structure. This conductive layer is formed through one patterning process using a single mask, eliminating the need for separate patterning processes for each component. The merged structure maintains precise formation of all components while significantly simplifying the manufacturing process and reducing mask requirements.
2Manufacturing precision
If multiple patterning processes are used to form source electrode, drain electrode and light shielding layer, then each component can be precisely formed, but the manufacturing cost increases due to multiple expensive masks
Solution Approach 1:
The patent combines the formation of source electrode, drain electrode, and light shielding layer into a single patterning step using one mask. This merging approach eliminates the need for multiple expensive masks while maintaining the precise formation of all components, thereby significantly reducing manufacturing costs.
Solution Approach 2:
The single conductive layer structure serves multiple functions simultaneously: it acts as the source electrode, drain electrode, and light shielding layer. This multi-functional design allows one patterning process to achieve what previously required multiple separate processes, reducing both cost and complexity.
3Reliability
If light shielding layer is formed separately, then light blocking function can be optimized, but the manufacturing process time increases
Solution Approach 1:
The patent merges the light shielding layer formation with the source and drain electrode formation into a single patterning process. This integration maintains the light blocking function by properly positioning the conductive layer to shield the active layer, while simultaneously reducing the total manufacturing process time by eliminating sequential steps.
Solution Approach 2:
The conductive layer is formed in advance as part of the initial patterning process, performing the light shielding function before subsequent manufacturing steps. This preliminary action ensures light blocking is established early in the process without requiring additional time-consuming steps later.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This integration simplifies the manufacturing process, decreases costs, and maintains the electrical characteristics of the active layer by blocking external light, thereby improving the reliability and performance of the thin film transistors.
Implementation Method 1
a light shielding layer, arranged between a source electrode and a drain electrode of the thin film transistor and configured to block light from the exterior from illuminating an active layer of the thin film transistor
Implementation Method 2
an amorphous silicon film is transformed into a poly-silicon film by an excimer laser annealing process
Implementation Method 3
an amorphous silicon film is transformed into a poly-silicon film by an excimer laser annealing process
Data Source
Figure 1
Figure 2a~2b
Figure 2c
AI summary
The present disclosure discloses a thin film transistor assembly, an array substrate and a method of manufacturing the same, and a display device including the array substrate. The array substrate includes a substrate; a plurality of thin film transistors formed on the substrate; and a plurality of light shielding layers, each of the light shielding layers being arranged between a source electrode and a drain electrode of the thin film transistor and configured to block light from the exterior from illuminating an active layer of the thin film transistor. The light shielding layer and the source electrode and the drain electrode of the thin film transistor are formed in the same layer on the substrate. As the light shielding layer, the source electrode and the drain electrode of the thin film transistor and a data line may be formed on the substrate by using the same material layer through a single patterning process, times of performing patterning processes and the number of masks used may be reduced and thus manufacturing process and cost of the array substrate may be decreased.