Thin Film Transistor Light Shielding via Gate Insulator
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Solution Overview
Problem
In thin film transistors, it is challenging to effectively prevent light from entering the active layer due to the distance between light-shielding films and active layers, which affects the transistor's characteristics and complicates manufacturing.
Innovation Solution
A gate insulating film comprising a first insulating film, a light-absorbing layer made of material absorbing light of 420 nm or less, and a second insulating film is used, reducing the distance between the light-absorbing layer and the active layer, thereby reliably preventing light entry and stabilizing transistor characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If a light-shielding film made of metal or silicon is arranged close to the active layer, then light shielding effectiveness is improved, but manufacturing complexity increases and electrical conductivity issues arise
Solution Approach 1:
The light-absorbing layer is merged into the gate insulating film structure, combining the light shielding function with the gate insulator. This integration eliminates the need for a separate light-shielding film layer, reducing manufacturing complexity while maintaining effective light blocking through the gate insulating film's multi-layer structure.
Solution Approach 2:
The gate insulating film is given multi-functionality by incorporating a light-absorbing layer within it. The gate insulating film now serves both its original electrical insulation function and an additional light shielding function, eliminating the need for a dedicated light-shielding component and simplifying the overall device structure.
2Object-affected harmful factors
If a light-shielding film is arranged close to the active layer, then light shielding effectiveness is improved, but electrical conductivity characteristics deteriorate
Solution Approach 1:
The gate insulating film acts as an intermediary structure that incorporates the light-absorbing layer. This intermediary approach allows light shielding to be achieved without direct contact between conductive materials and the active layer, preventing electrical conductivity issues while maintaining effective light blocking through the insulating film's light-absorbing components.
Solution Approach 2:
The light-absorbing function is extracted from traditional conductive light-shielding materials and transferred to a non-conductive gate insulating film structure. This extraction eliminates the electrical conductivity problems associated with using metal or silicon light-shielding films while maintaining the light shielding effectiveness through the light-absorbing layer within the insulator.
3Object-affected harmful factors
If distance between light-shielding layer and active layer is reduced, then light shielding effectiveness is improved, but manufacturing precision requirements increase
Solution Approach 1:
The light-absorbing layer is merged into the gate insulating film formation process, combining multiple functions into a single integrated structure. This merging eliminates the need for separate positioning of light-shielding and gate insulator layers, reducing manufacturing precision requirements while achieving effective light shielding through the integrated multi-layer gate insulating film.
Solution Approach 2:
The gate insulating film structure is designed to perform multiple functions simultaneously - electrical insulation and light shielding - within a single integrated component. This multi-functionality reduces the number of separate layers that need precise positioning, thereby lowering manufacturing precision requirements while maintaining effective light blocking.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively prevents light from entering the active layer, stabilizing the thin film transistor characteristics and improving display quality by reducing leakage and degradation in liquid crystal displays.
Implementation Method 1
a first light-absorbing layer arranged in contact with the first insulating film and made of a material absorbing light of 420 nm or less
Data Source
AI summary
A thin film transistor capable of reliably preventing the entry of light into an active layer, and a display including the thin film transistor are provided. A thin film transistor includes: a gate electrode; an active layer; and a gate insulating film arranged between the gate electrode and the active layer, the gate insulating film including a first insulating film, a first light-absorbing layer and a second insulating film, the first insulating film arranged in contact with the gate electrode, the first light-absorbing layer arranged in contact with the first insulating film and made of a material absorbing light of 420 nm or less, the second insulating film arranged between the first light-absorbing layer and the active layer.