Metal Phosphorus Oxide Layer for TFT Reliability
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Solution Overview
Problem
The formation of porous metal oxides between the main wiring layer and the passivation layer in display devices deteriorates the reliability of thin film transistor array panels, particularly due to the use of materials like copper, which increases signal line resistance and affects device performance.
Innovation Solution
A thin film transistor array panel design incorporating a metal phosphorus oxide layer that covers the source and drain electrodes, along with a barrier layer and a passivation layer, is implemented to prevent the formation of porous metal oxides. The metal phosphorus oxide layer includes phosphorus, oxygen, and metals like copper, aluminum, or silver, and is formed through phosphine treatment, while the barrier layer exposes the channel region of the semiconductor layer to enhance reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If copper or copper alloy is used for the main wiring layer to reduce signal line resistance, then the signal line resistance is reduced, but porous metal oxide is formed between the main wiring layer and the passivation layer, deteriorating device reliability
Solution Approach 1:
A metal phosphorus oxide layer is introduced as an intermediary barrier between the copper-based data wire layer and the passivation layer. This intermediate layer prevents direct contact and oxidation reactions between copper and oxygen-containing materials, eliminating the formation of porous metal oxide while maintaining the low resistance特性 of copper wiring.
Solution Approach 2:
The patent uses composite material structure by combining copper-based metal with phosphorus oxide to form the metal phosphorus oxide layer. This composite structure provides both the electrical conductivity benefits of copper and the protective properties of phosphorus oxide, preventing harmful oxidation while maintaining signal transmission quality.
2Reliability
If a barrier layer is added to prevent metal oxidation, then oxidation prevention is improved, but the device structure becomes more complex
Solution Approach 1:
The metal phosphorus oxide layer serves multiple functions simultaneously: it acts as a barrier to prevent oxidation, provides a smooth interface for subsequent passivation layer deposition, and maintains electrical properties suitable for signal transmission. This multi-functionality reduces the need for additional separate barrier layers, thereby limiting the increase in structural complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves the reliability of the thin film transistor array panel by preventing oxidation of the data wire layers and maintaining uniform characteristics as a switching element, thereby enhancing the device's operational performance and reducing signal line resistance.
Implementation Method 1
the data wire layer may include a copper-based metal... porous metal oxide between the main wiring layer and a passivation layer covering thereon... metal phosphorus oxide layer configured to cover the source electrode and the drain electrode
Implementation Method 2
forming a metal phosphorus oxide layer covering the source electrode and the drain electrode... phosphine treatment on the data wire layer
Data Source
AI summary
One or more exemplary embodiments disclose a thin film transistor array panel and a manufacturing method thereof including a substrate, a gate line on the substrate, the gate line including a gate electrode, a gate insulating layer on the gate electrode, a semiconductor layer on the gate insulating layer, and the semiconductor layer including an oxide semiconductor, a data wire layer above the semiconductor layer, the data wire layer including a data line, a source electrode coupled to the data line, and a drain electrode facing the source electrode, and a metal phosphorus oxide layer configured to cover the source electrode and the drain electrode.