TFT Array Panel Noise Removal Unit for Leakage Prevention
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Solution Overview
Problem
Current thin film transistor array panels in liquid crystal displays experience current leakage and transistor deterioration due to high electric fields, which affect the reliability and efficiency of the display devices.
Innovation Solution
A thin film transistor array panel design that includes a substrate with a first gate electrode, a voltage wire, a gate insulating layer, a semiconductor pattern made of oxide semiconductor material, source and drain electrodes separated by a passivation layer, and a first electrode connected to the voltage wire, which helps in preventing current leakage and transistor deterioration by managing the electric field effectively.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If high voltage is applied between source and drain electrodes or gate and source electrode in oxide semiconductor thin film transistors, then high electron mobility is achieved, but current leakage and charge trapping occur due to high electric field
Solution Approach 1:
A noise removal unit is introduced as an intermediary component between the gate driver and the thin film transistor array. This unit includes a noise removal electrode that is coupled to a noise removal line, which is connected to a reference potential. The noise removal electrode is positioned to face the gate electrode, creating an intermediate electric field region that shields and stabilizes the high electric field between source and drain electrodes, thereby preventing current leakage while maintaining high electron mobility
2Ease of operation
If high voltage is applied between gate and source electrode, then transistor switching capability is improved, but transistor deterioration occurs due to high electric field
Solution Approach 1:
The noise removal unit is configured to preemptively shield the gate electrode from high voltage stress before deterioration occurs. The noise removal electrode, connected to reference potential through the noise removal line, creates a protective electric field configuration that cushions the gate electrode against excessive electric field effects, allowing improved switching capability while preventing transistor deterioration
Data Source
AI summary
A thin film transistor array panel includes a substrate, a first gate electrode disposed on the substrate, a voltage wire disposed on the substrate, a gate insulating layer disposed on the first gate electrode and the voltage wire, a semiconductor pattern including an oxide semiconductor material disposed on the gate insulating layer, a source electrode and a drain electrode disposed at a distance from each other on the semiconductor pattern, a first passivation layer disposed on the source electrode and the drain electrode, and a first electrode disposed on the first passivation layer and connected with the voltage wire.