Thin-Film Transistor with Oxide-Semiconductor Support Layer
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Solution Overview
Problem
Current thin-film transistors face limitations in terms of mobility, manufacturing cost, and reliability, particularly in large-sized and flexible display applications, with amorphous silicon transistors having low mobility, polycrystalline silicon transistors being costly and difficult to scale, and oxide semiconductor transistors being sensitive to oxygen content.
Innovation Solution
A thin-film transistor structure incorporating a semiconductor layer with a first oxide semiconductor layer and a second two-dimensional semiconductor layer, where the energy band gap of the first layer is larger than that of the second layer, providing support and protection to the two-dimensional semiconductor layer, enhancing mobility and reliability while allowing for flexibility and high-resolution displays.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If amorphous silicon is used as the active layer, then manufacturing time is short and manufacturing cost is low, but mobility is low and current-driving ability is poor
Solution Approach 1:
The patent uses a composite semiconductor layer structure combining amorphous silicon and oxide semiconductor materials. The amorphous silicon layer provides ease of manufacture and the oxide semiconductor layer provides high mobility, creating a composite structure that achieves both fast manufacturing and excellent electrical properties.
2Reliability
If polycrystalline silicon is used as the active layer, then mobility is improved, but the number of processes increases and manufacturing cost increases
Solution Approach 1:
The patent combines amorphous silicon and oxide semiconductor in a layered structure, achieving high mobility similar to polycrystalline silicon but without requiring the complex crystallization processes. The oxide semiconductor layer provides the high mobility needed while the amorphous silicon layer maintains manufacturing simplicity.
3Reliability
If polycrystalline silicon is used as the active layer, then mobility is improved, but it is difficult to apply to large-sized apparatus
Solution Approach 1:
The composite structure allows large-area fabrication because the amorphous silicon and oxide semiconductor layers can be deposited using sputtering or atomic layer deposition techniques that are scalable to large substrates, unlike the laser annealing required for polycrystalline silicon which becomes difficult at large scales.
4Adaptability or versatility
If a thin structure is used for flexibility, then flexibility is improved, but manufacturing precision becomes more difficult to maintain
Solution Approach 1:
The patent optimizes the thickness parameters of each layer - the oxide semiconductor layer is kept thin (3-10 nm) for flexibility and high mobility, while the amorphous silicon layer is sufficiently thick (5-30 nm) to provide mechanical support and protect against oxygen loss, achieving both flexibility and manufacturing precision.
Data Source
AI summary
The present disclosure relates to a thin-film transistor including two-dimensional semiconductor and display apparatus including the same. The thin-film transistor includes a gate electrode disposed on a substrate, a semiconductor layer disposed so as to overlap at least a portion of the gate electrode in the state of being isolated from the gate electrode, a gate insulation film disposed between the gate electrode and the semiconductor layer, a source electrode connected to the semiconductor layer, and a drain electrode connected to the semiconductor layer in the state of being spaced apart from the source electrode, wherein the semiconductor layer includes a first layer including an oxide semiconductor and a second layer disposed so as to overlap the first layer in a plane view, the second layer comprising a two-dimensional semiconductor, and an energy band gap of the first layer is larger than an energy band gap of the second layer.