Oxygen Vacancy Reducing Layer in Thin Film Transistors
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Solution Overview
Problem
Thin film transistors (TFTs) face issues with carrier transmission rate and subthreshold swing due to oxygen vacancies in metallic nitrogen-oxide active layers and high contact resistances between the active layer and source/drain, impacting their operation capacity.
Innovation Solution
Incorporating a conductive oxygen vacancy reducing layer, formed from metal nitride materials like MoxN(1−x) or NdMoN, between the active layer and the source and/or drain to reduce oxygen vacancies, thereby improving carrier transmission and contact resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If metallic nitrogen-oxide material is used for the active layer, then the TFT can be formed with standard materials, but oxygen vacancies are created that reduce carrier transmission rate and increase subthreshold swing
Solution Approach 1:
An oxygen vacancy reducing layer is introduced as an intermediary between the source/drain and the active layer. This layer mediates the interaction by reducing oxygen vacancies in the active layer through thermal diffusion, thereby improving carrier transmission rate while maintaining the use of standard metallic nitrogen-oxide materials for the active layer.
Solution Approach 2:
The patent changes the physical and chemical parameters of the active layer by introducing an oxygen vacancy reducing layer that diffuses atoms (such as nitrogen or oxygen) into the active layer during thermal processing. This parameter change reduces oxygen vacancy concentration and improves carrier transmission rate without changing the fundamental material composition of the active layer.
2Ease of manufacture
If metallic nitrogen-oxide material is used for the active layer, then the TFT can be formed with standard materials, but contact resistance between source/drain and active layer increases
Solution Approach 1:
The oxygen vacancy reducing layer serves as a mediator between the source/drain electrodes and the active layer. This intermediary layer improves contact characteristics by reducing oxygen vacancies at the interface, thereby lowering contact resistance while allowing the use of standard metallic nitrogen-oxide materials for the active layer.
3Device complexity
If oxygen vacancies are present in the active layer, then the structure is simple, but subthreshold swing increases impacting TFT operation capacity
Solution Approach 1:
An oxygen vacancy reducing layer is introduced as an intermediary between the source/drain and the active layer. This layer mediates the interaction by reducing oxygen vacancies in the active layer through thermal diffusion, thereby improving carrier transmission rate while maintaining the use of standard metallic nitrogen-oxide materials for the active layer.
Solution Approach 2:
The patent changes the physical and chemical parameters of the active layer by introducing an oxygen vacancy reducing layer that diffuses atoms (such as nitrogen or oxygen) into the active layer during thermal processing. This parameter change reduces oxygen vacancy concentration and improves carrier transmission rate without changing the fundamental material composition of the active layer.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Significantly increases carrier transmission rate and decreases subthreshold swing, enhancing the operation capacity of TFTs and improving contact characteristics between the source, drain, and active layer.
Implementation Method 1
the oxygen vacancy reducing layer is disposed between the active layer and the source, and/or between the active layer and the drain... the number of the oxygen vacancies in the active layer is reduced significantly
Data Source
AI summary
The invention provides a thin film transistor, an array substrate and a display device. The thin film transistor comprises a conductive oxygen vacancy reducing layer for reducing oxygen vacancies in an active layer. The oxygen vacancy reducing layer is disposed between the active layer and a source and/or the active layer and a drain. With the oxygen vacancy reducing layer, the number of the oxygen vacancies in the active layer is decreased greatly, which improves transmission rate of carriers and simultaneously reduces value of subthreshold swing of the thin film transistor.