Thin Film Transistor With Phase-Change Metal Oxide for Heat Management
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Solution Overview
Problem
Devices in the display, light source, and electronics fields face high energy consumption and rapid aging due to heat generation, leading to shortened service life.
Innovation Solution
A thin film transistor design featuring a substrate with a gate metal and insulating layer, combined with first and second metal oxides that change from insulating to conductive states at a predetermined temperature, reducing channel length and increasing current flow, while a display panel and apparatus incorporate these transistors with additional layers for efficient energy use and extended lifespan.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional transistors are used in display devices, then the device can operate and display functions are achieved, but energy consumption is high and heat is generated leading to rapid aging and shortened service life
Solution Approach 1:
The patent employs vanadium dioxide metal oxide that undergoes phase transition from insulating state to conductive state at a predetermined temperature. This phase transition enables the transistor to reduce channel resistance and minimize energy consumption while maintaining display functionality, thereby extending service life without compromising operational reliability
Solution Approach 2:
The invention changes the physical parameter of the metal oxide material from insulating to conductive state through temperature-induced phase transition. This parameter change allows the transistor to dynamically adjust its electrical properties, reducing energy consumption and heat generation while maintaining reliable operation throughout the device's service life
2Use of energy by moving object
If metal oxides undergo phase transition from insulating to conductive state at predetermined temperature, then channel resistance is reduced and current flow increases improving energy efficiency, but the device complexity increases due to additional layers and phase change materials
Solution Approach 1:
The patent merges the phase-change material functionality directly into the transistor channel structure. The vanadium dioxide metal oxide is integrated as part of the active layer between source and drain electrodes, combining the phase transition property with the transistor's current-conducting function. This integration reduces the need for separate components while achieving energy efficiency through phase transition
Solution Approach 2:
The metal oxide layer serves multiple functions: it acts as the active channel material for current conduction, provides temperature-sensitive phase transition capability for energy efficiency, and functions as part of the transistor's switching mechanism. This multi-functionality reduces overall device complexity by eliminating the need for separate energy management components
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution reduces energy consumption and prolongs the service life of devices by minimizing channel resistance and reusing heat generated during phase changes, enhancing performance and reducing current load.
Implementation Method 1
phases of the first metal oxide and the second metal oxide are capable of being changed from an insulation state to a conductive state when temperature rises to a predetermined value
Data Source
AI summary
A thin film transistor, a display panel and a preparation method thereof and a display apparatus are provided. The thin film transistor includes: a substrate; a gate metal located on a side of the substrate; a gate insulating layer located on a side of the gate metal away from the substrate; an active layer located on a side of the gate insulating layer away from the substrate; a first metal oxide and a second metal oxide which are located on a side of the active layer away from the substrate and are arranged on a same layer; and a source metal and a drain metal which are located on sides of the first metal oxide and the second metal oxide away from the substrate and are arranged in a same layer.