TFT Pixel Structure UV Protection via Photocatalytic Film

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Solution Overview

Problem

The fabrication of pixel structures in electroluminescence apparatuses is hindered by the deterioration of device characteristics when ultraviolet light is irradiated on the semiconductor layer, affecting the performance of the active device and the overall electroluminescence apparatus.

Innovation Solution

Incorporating a film layer with a transparent photocatalytic material, such as insulating metal oxides or metal oxide nanoparticles, to block ultraviolet light from reaching the metal oxide semiconductor (MOS) layer, thereby protecting it from irradiation damage.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If ultraviolet light is used to clean the lower electrode layer surface, then contaminant removal is improved, but the semiconductor layer characteristics deteriorate

Engineering Contradiction:

Improvesurface cleaning effectivenessVSAvoidsemiconductor layer characteristics

Core Design Contradiction:

Ease of manufactureVSReliability

Solution Approach 1:

A transparent photocatalytic film layer is introduced as an intermediary between the ultraviolet light source and the semiconductor layer. This film layer absorbs the ultraviolet light and performs the cleaning function through photocatalysis, while preventing the harmful radiation from reaching the semiconductor layer, thus resolving the contradiction between effective cleaning and semiconductor layer protection

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The harmful ultraviolet light that would otherwise damage the semiconductor layer is converted into a beneficial cleaning mechanism through the photocatalytic film layer. The ultraviolet light activates the photocatalytic material to decompose and remove contaminants from the electrode surface, transforming a potentially harmful radiation into a useful cleaning tool

Inventive Principle:

Principle #22Blessing in disguise (Convert harm into benefit)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This solution prevents the deterioration of device characteristics, ensuring good performance and stability of the pixel structure and electronic devices by blocking ultraviolet light, thus maintaining optimal device characteristics.

Implementation Method 1

The transparent photocatalytic material blocks an ultraviolet light from reaching the MOS layer

Methodology Applied

Scientific EffectUltraviolet light blocking: Absorption (EM radiation)

Implementation Method 2

The film layer includes a transparent photocatalytic material

Methodology Applied

Scientific EffectPhotocatalysis: Photo-oxidation

Data Source

PatentUS9196740B2TFT structure and pixel structure

Publication Date: 2015.11.24 AU OPTRONICS CORP

AI summary

A pixel structure including a substrate, a gate, an insulation layer, a metal oxide semiconductor (MOS) layer, a source and a drain, at least one film layer, and a first electrode layer is provided. The gate is disposed on the substrate. The insulation layer covers the gate. The MOS layer is disposed on the insulation layer above the gate. The source and the drain are disposed on the MOS layer. The film layer covers the MOS layer and includes a transparent photocatalytic material, wherein the transparent photocatalytic material blocks ultraviolet light from reaching the MOS layer. The first electrode layer is electrically connected to the source or the drain.