Thin Film Transistor with Segmented Semiconductor Crystallinity
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Solution Overview
Problem
Conventional display devices face challenges in manufacturing thin film transistors (TFTs) with different characteristics, such as high on/off current ratio and high charge mobility, as these characteristics are often traded off, making it difficult to simultaneously satisfy both in TFTs with the same structure, leading to complex and costly manufacturing processes.
Innovation Solution
A thin film transistor design featuring a semiconductor with distinct crystallinity portions, where a higher crystallinity portion is thinner and overlapped by a lower crystallinity portion, allowing for the formation of TFTs with different characteristics using a single manufacturing method and apparatus, including a gate driver and data driver integrated on a substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If TFTs with the same structure are used, then manufacturing process is simplified, but it is difficult to simultaneously satisfy high on/off current ratio and high charge mobility due to characteristic trade-off
Solution Approach 1:
The semiconductor layer is designed with different crystallinities in different regions: a first region with higher crystallinity for high charge mobility and a second region with lower crystallinity for high on/off current ratio. This local differentiation allows each region to optimize for its specific function while using a single manufacturing process.
Solution Approach 2:
The semiconductor layer is segmented into distinct regions with different crystalline properties. The first region (higher crystallinity) and second region (lower crystallinity) are spatially separated, with the second region overlapping the gate electrode and the first region adjacent to it, enabling different electrical characteristics in different parts of the same TFT structure.
2Adaptability or versatility
If TFTs with different structures are manufactured through different processes and apparatus, then various TFT characteristics are achieved, but manufacturing complexity and cost are remarkably increased
Solution Approach 1:
A single semiconductor layer serves multiple functions by having different crystallinities in different regions. The same layer formation process produces both the high-mobility region and the high-off-state region, making the manufacturing process universal for producing different TFT characteristics without requiring separate processes or apparatus.
Solution Approach 2:
The crystallinity parameter of the semiconductor layer is varied spatially to achieve different TFT characteristics. By controlling the crystallinity degree in different regions (higher in the first region, lower in the second region), the invention achieves characteristic differentiation through parameter variation rather than structural or process complexity.
3Ease of manufacture
If a single semiconductor layer with uniform crystallinity is used, then manufacturing is simplified, but it cannot provide both high charge mobility and high on/off current ratio
Solution Approach 1:
Instead of uniform crystallinity, the semiconductor layer has localized quality variations with higher crystallinity in the first region for charge transport and lower crystallinity in the second region for current ratio control, achieving both performance requirements through spatially differentiated properties.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the production of TFTs with desired characteristics on a single substrate, reducing manufacturing complexity and cost while maintaining high carrier mobility and stability, and minimizing degradation under bias and thermal stress.
Implementation Method 1
the semiconductor includes a first portion disposed between the input electrode and the output electrode and having a first crystallinity, and a second portion connected to the first portion, overlapping the input electrode or the output electrode, and having a second crystallinity
Data Source
AI summary
A thin film transistor, a display device, and a manufacturing method thereof. The thin film transistor includes a control electrode, a semiconductor overlapping the control electrode, and an input electrode and an output electrode disposed on or under the semiconductor and opposite to each other. The semiconductor includes a first portion disposed between the input electrode and the output electrode and having a first crystallinity, and a second portion connected with the first portion, which overlaps the input electrode or the output electrode, and having a second crystallinity. The first crystallinity is higher than the second crystallinity.