Single Patterning Thin Film Transistor Manufacturing
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Solution Overview
Problem
The complexity of manufacturing thin film transistors (TFTs) in display technology requires multiple patterning processes, making the existing procedures cumbersome and inefficient.
Innovation Solution
A method is introduced to form the source electrode, drain electrode, and active layer of TFTs using a single patterning process, where the active layer is positioned between the source and drain electrodes, and ion implantation is used to create the necessary semiconductor and conductor regions, reducing the number of patterning processes required.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If multiple patterning processes are used to form source electrode, drain electrode and active layer separately, then each component can be precisely controlled, but the manufacturing process becomes complex and time-consuming
Solution Approach 1:
The patent combines the formation of source electrode, drain electrode, and active layer into a single patterning process. A metal oxide film is deposited and then selectively etched in one step to simultaneously create all three components with their required patterns, eliminating the need for separate patterning steps for each component while maintaining manufacturing precision
Solution Approach 2:
The single patterning process serves multiple functions: it defines the source electrode pattern, drain electrode pattern, and active layer pattern simultaneously. The etching step creates conductive regions and semiconductor regions in one operation, making the process multi-functional and reducing overall process complexity
2Manufacturing precision
If multiple patterning processes are used to form source electrode, drain electrode and active layer separately, then each component can be independently optimized, but the manufacturing time increases
Solution Approach 1:
The patent merges multiple sequential patterning operations into a single parallel process. By depositing a unified metal oxide film and applying one etching step with appropriate masking, all three components (source electrode, drain electrode, and active layer) are formed simultaneously, dramatically reducing manufacturing time while maintaining the ability to independently optimize each component's dimensions and positions through mask design
Solution Approach 2:
The metal oxide film is deposited in advance as a unified layer that will serve as the precursor for all three components. This preliminary deposition allows subsequent single-step etching to create all required patterns simultaneously, reducing the number of sequential operations needed and accelerating the manufacturing process
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This simplifies the manufacturing process by reducing the number of patterning steps, making the TFT production more efficient and less complex, while maintaining the necessary electrical connections and semiconductor properties.
Implementation Method 1
subjecting the metal oxide conductor film to ion implantation, so as to enable the metal oxide conductor film corresponding to the active layer region to form a semiconductor and thereby form the active layer
Data Source
AI summary
The present disclosure relates to the field of display technology, and provides a TFT, a method for manufacturing the TFT, an array substrate, a method for manufacturing the array substrate, and a display device. The method for manufacturing the TFT includes a step of forming a pattern including a source electrode, a drain electrode and an active layer by a single patterning process, wherein the source electrode, the drain electrode and the active layer are arranged at an identical layer, and the active layer is arranged between the source electrode and the drain electrode.