Thin-Film Transistor Structure With Slow-Release Electrode for Leakage Control
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The existing thin film transistor structures in display panels suffer from pixel electrode leakage current during the holding phase, leading to unstable display brightness due to high voltage differences between the source and drain electrodes, which is not effectively addressed by current material or process modifications.
Innovation Solution
Incorporating a slow-release electrode within the insulating layer between the source and drain electrodes, which is charged when the grid electrode is energized, and maintaining a smaller voltage difference with the drain electrode when powered off, thereby reducing carrier movement and leakage current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the grid electrode is powered off during the holding phase, then the pixel electrode potential should be maintained, but leakage current occurs due to high voltage difference between source and drain electrodes
Solution Approach 1:
The patent introduces a slow-release electrode as an intermediary component between the source and drain electrodes. This electrode is configured to release charges gradually during the holding phase, mediating the voltage difference between source and drain to prevent excessive carrier movement and leakage current while maintaining pixel electrode potential stability.
Solution Approach 2:
The slow-release electrode is pre-charged during the transistor on-state before the holding phase begins. This preliminary charging action stores electrical energy that is then gradually released during the holding phase to counteract the voltage difference between source and drain electrodes, preventing leakage current before it can occur.
2Reliability
If material or process modifications are made to improve leakage, then manufacturing complexity and defective rate increase
Solution Approach 1:
The patent segments the electrode structure by introducing a separate slow-release electrode component distinct from the source, drain, and grid electrodes. This segmentation allows the slow-release electrode to be independently configured and optimized for charge storage and gradual release functionality, improving leakage reduction without requiring complex modifications to the existing electrode materials or processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively maintains the potential of the pixel electrode during the holding phase, reducing leakage current and stabilizing display brightness by minimizing voltage differences between the slow-release electrode and the source and drain electrodes.
Implementation Method 1
When the grid electrode is energized, the slow-release electrode is charged; and when the grid electrode is powered off after energized for a while, a voltage difference between the slow-release electrode and the drain electrode is smaller than a voltage difference between the slow-release electrode and the source electrode
Implementation Method 2
When the grid electrode is energized, an electric field is generated. The force line of the electric field is directed from the grid electrode to the semiconductor surface between the drain electrode and the source electrode, and generates induced charges on the semiconductor surface
Data Source
AI summary
Disclosed are a thin film transistor structure, a display panel and a display device. The thin film transistor structure includes a base, a source electrode, a drain electrode configured to connect to a pixel electrode and a grid electrode. The source electrode, the drain electrode and the grid electrode are provided on the base. and a channel is formed between the source electrode and the drain electrode. The thin film transistor structure further includes an insulating layer and a slow-release electrode. The insulating layer is provided on a side of the source electrode and the drain electrode, and filled in the channel. The slow-release electrode is provided in the insulating layer. At least a part of the slow-release electrode is provided inside the channel.