TFT Array Substrate Storage Capacitor Light Inflow Path

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Solution Overview

Problem

LCD devices experience defects such as vertical line-shaped stains, flicker, and afterimages due to variations in the capacitance of storage capacitors, which affect the voltage applied to pixel electrodes, leading to brightness inconsistencies and image quality issues.

Innovation Solution

A thin-film transistor (TFT) array substrate with a storage capacitor that includes a lower electrode with a light inflow path, reducing capacitance changes by allowing light to be incident on the semiconductor layer, thereby stabilizing the kickback voltage and minimizing defects in image display.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a storage capacitor with semiconductor material is used, then the capacitance can be increased to improve voltage holding, but the capacitance varies with voltage and frequency causing kickback voltage changes and image defects

Engineering Contradiction:
Improvevoltage holding capabilityVSAvoidcapacitance stability
Core Design Contradiction:
ReliabilityVSStability of the object's composition

Solution Approach 1:

The patent introduces a light inflow path in the lower electrode to enable light incident on the semiconductor layer, changing the physical state of the semiconductor material. This optical parameter change stabilizes the capacitance by controlling carrier generation and recombination, thereby maintaining stable voltage holding capability without kickback voltage variations

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The light inflow path acts as an intermediary mechanism between light and the semiconductor layer. By controlling light incident through this path, the patent mediates the electrical properties of the semiconductor, stabilizing capacitance while maintaining the benefits of semiconductor-based storage capacitors

Inventive Principle:
Principle #24Intermediary (Mediator)

2Adaptability or versatility

If the capacitance of the storage capacitor changes, then the voltage applied to the pixel electrode varies, but this causes brightness differences and image defects such as vertical line-shaped stains, flicker, and afterimages

Engineering Contradiction:
Improvevoltage adjustment capabilityVSAvoidimage quality
Core Design Contradiction:
Adaptability or versatilityVSReliability

Solution Approach 1:

The patent uses light incident through the light inflow path to change the physical state of the semiconductor layer, thereby stabilizing capacitance. This parameter change ensures consistent voltage application to pixel electrodes, preventing brightness differences and image defects while maintaining operational flexibility

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution effectively reduces capacitance variations in storage capacitors, minimizing kickback voltage changes and preventing defects like vertical line-shaped stains, flicker, and afterimages, thereby enhancing image quality in LCD devices.

Implementation Method 1

a lower electrode including a light inflow path, and an upper electrode disposed to face the lower electrode

Methodology Applied
Scientific EffectLight absorption: Absorption (EM radiation)

Data Source

PatentUS10108061B2Thin film transistor array substrate and liquid crystal display device including the same
Publication Date: 2018.10.23 TCL CHINA STAR OPTOELECTRONICS TECHNOLOGY CO LTD
  • US10108061B2 patent drawing
  • US10108061B2 patent drawing
  • US10108061B2 patent drawing

AI summary

A thin-film transistor (TFT) array substrate includes a transistor disposed on a base substrate and a storage capacitor electrically connected to the transistor. The transistor includes a gate electrode, an active layer electrically insulated from the gate electrode, the active layer including a semiconductor material, and a first electrode and a second electrode disposed to be spaced apart from each other on the active layer. The storage capacitor includes a lower electrode including a light inflow path, and an upper electrode disposed to face the lower electrode and electrically connected to the second electrode.