Thin Film Transistor Substrate With Selective Active Pattern Protrusions
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Solution Overview
Problem
The existing manufacturing processes for thin film transistors face challenges in achieving uniform dopant injection and short-range uniformity due to protrusions on the active patterns, which can affect device characteristics and yield, especially when forming CMOS devices with PMOS and NMOS transistors.
Innovation Solution
The process involves forming a thin film transistor substrate with a first and second active pattern, where the second active pattern has protrusions on its surface, and using a masking layer to selectively remove protrusions from the first active pattern, ensuring uniform doping and improved device characteristics by flattening the first active pattern surface while maintaining protrusions on the second active pattern.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If protrusions are formed on the active pattern surface to improve device characteristics, then device performance is enhanced, but dopant injection uniformity deteriorates
Solution Approach 1:
The patent applies local quality by differentiating the surface structure between two active patterns: one with protrusions to enhance device characteristics and another with a flat surface to ensure uniform dopant injection. This selective structural differentiation allows each transistor type (PMOS and NMOS) to have optimized surface characteristics tailored to their specific performance requirements while maintaining overall manufacturing feasibility
2Reliability
If protrusions are present on both active patterns, then device characteristics improve, but short-range uniformity deteriorates
Solution Approach 1:
The invention implements local quality by selectively providing protrusions only on the second active pattern while maintaining a flat surface on the first active pattern. This localized structural modification enables the second transistor to benefit from enhanced device characteristics through protrusions, while the first transistor maintains optimal short-range uniformity for dopant injection, thereby resolving the uniformity issue across the CMOS device pair
3Reliability
If different surface structures are used for PMOS and NMOS, then device performance is optimized, but manufacturing complexity increases
Solution Approach 1:
The patent applies segmentation by dividing the active pattern formation process into distinct stages: first forming the initial active patterns, then selectively creating protrusions only on the second active pattern through separate processing steps. This segmented approach allows different surface structures to be implemented for PMOS and NMOS transistors while managing manufacturing complexity through systematic process separation rather than requiring entirely different fabrication methodologies
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the uniformity of dopant injection and improves device characteristics by ensuring that one of the transistors can have protrusions for improved performance, addressing the issue of short-range uniformity and manufacturing complexity in CMOS devices.
Implementation Method 1
forming a plurality of first protrusions on an upper surface of the first active pattern and forming a plurality of second protrusions on an upper surface of the second active pattern by irradiating a laser beam onto the first active pattern and the second active pattern
Data Source
AI summary
A thin film transistor substrate, a display device, a method of manufacturing a thin film transistor substrate, and a method of manufacturing a display device, the thin film transistor substrate including a substrate; a first thin film transistor on the substrate, the first thin film transistor including a first active pattern, and a first gate electrode arranged to overlap at least a part of the first active pattern; and a second thin film transistor on the substrate, the second thin film transistor including a second active pattern that includes a plurality of protrusions on an upper surface thereof, and a second gate electrode arranged to overlap at least a part of the second active pattern.