Thin-Film Transistor Substrate With Light-Shield Conduction Paths

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Solution Overview

Problem

Thin film transistors face a trade-off between achieving high on-current and a large S-factor, where increasing one typically decreases the other, making it difficult to simultaneously improve both characteristics.

Innovation Solution

A thin film transistor substrate is designed with a light shielding layer made of conductive material, an active layer overlapping the light shielding layer, and a connection layer connecting the light shielding layer with the active layer, which provides additional electron paths and improves on-current while maintaining a large S-factor.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Power

If the on-current is increased, then the switching performance is improved, but the S-factor becomes smaller

Engineering Contradiction:
Improveon-currentVSAvoidS-factor
Core Design Contradiction:
PowerVSReliability

Solution Approach 1:

The invention divides the electron transport path into multiple segments by introducing a light shielding layer with connection layers that create parallel conduction paths. The active layer is segmented into regions connected through the light shielding layer, allowing electrons to travel through multiple pathways (direct path through active layer and indirect path through light shielding layer), thereby increasing total current while maintaining proper charge control for good S-factor

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The invention adds a vertical dimension to the electron transport by stacking the light shielding layer between the substrate and the active layer, with connection layers providing vertical electrical connections. This creates a three-dimensional electron transport network where current can flow through multiple layers, increasing the effective conduction area without compromising the two-dimensional charge control that determines S-factor

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Reliability

If the S-factor is increased, then the gray scale expression is improved, but the on-current becomes smaller

Engineering Contradiction:
ImproveS-factorVSAvoidon-current
Core Design Contradiction:
ReliabilityVSPower

Solution Approach 1:

The active layer is segmented into multiple regions that are electrically connected through the light shielding layer via connection layers. This segmentation creates parallel conduction paths where the total current is the sum of currents through each path, enabling high on-current while each individual path maintains proper charge control for good S-factor

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The light shielding layer acts as an intermediary structure that provides additional conduction paths between the source and drain electrodes. The connection layers serve as intermediary connection points that link the active layer to the light shielding layer, creating alternative electron transport routes that increase total current without interfering with the gate-controlled charge distribution that determines S-factor

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration enhances on-current and S-factor characteristics, allowing for improved gray scale expression and reduced overheating issues in display apparatuses by efficiently managing electron flow and heat dissipation.

Implementation Method 1

a connection layer disposed between the light shielding layer and the active layer and connecting electrically the light shielding layer with the active layer

Methodology Applied
Scientific EffectElectrical conduction: Conduction (electrical)

Implementation Method 2

efficiently managing electron flow and heat dissipation

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Data Source

PatentUS20240047582A1Thin film transistor substrate and display apparatus comprising the same
Publication Date: 2024.02.08 LG DISPLAY CO LTD
  • US20240047582A1 patent drawing
  • US20240047582A1 patent drawing
  • US20240047582A1 patent drawing

AI summary

Discussed is a thin film transistor and a display apparatus. The thin film transistor can include a light shielding layer disposed on the substrate and formed of, or include conductive materials, an active layer disposed on the light shielding layer and overlapping the light shielding layer, a source electrode connected to a first side of the active layer and the light shielding layer, a drain electrode connected to a second side of the active layer, a gate electrode overlapping the active layer, and a connection layer disposed between the light shielding layer and the active layer, and electrically connecting the light shielding layer with the active layer.