TFT Array Substrate Structure to Block Hydrogen Diffusion
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Solution Overview
Problem
Existing thin film transistor array substrates for display devices face challenges in reducing manufacturing costs, achieving optimal thickness, and enhancing flexibility due to the combination of low-temperature polysilicon and metal oxide semiconductor technologies, which result in high power consumption, image retention, and complexity in processing.
Innovation Solution
A thin film transistor array substrate is designed with a polysilicon semiconductor layer subjected to hydrogenation treatment before forming the oxide semiconductor layer, using an intermediate insulating layer with optimized thickness and hydrogen content to prevent hydrogen ion diffusion, simplifying the manufacturing process and reducing substrate thickness while improving flexibility.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If low-temperature polysilicon and metal oxide semiconductor layers are arranged on the same substrate, then the display device achieves high brightness and high resolution, but the manufacturing process becomes complicated and manufacturing cost increases
Solution Approach 1:
The patent applies preliminary hydrogenation treatment to the polysilicon semiconductor layer before forming the oxide semiconductor layer. This preliminary action modifies the polysilicon layer's properties in advance, enabling better compatibility with subsequent oxide layer formation and simplifying the overall manufacturing process while maintaining high brightness performance
2Manufacturing precision
If low-temperature polysilicon and metal oxide semiconductor layers are arranged on the same substrate, then the display device achieves high resolution, but the manufacturing cost remains high
Solution Approach 1:
The patent changes the hydrogen content parameter of the polysilicon semiconductor layer through controlled hydrogenation treatment. This parameter change enables the polysilicon layer to be compatible with oxide semiconductor processing conditions, allowing cost-effective manufacturing while maintaining high resolution performance
3Reliability
If the array substrate combines multiple semiconductor layers, then the display device achieves better performance, but the substrate thickness becomes large
Solution Approach 1:
The patent employs thin film structures for both the polysilicon and oxide semiconductor layers, optimizing their thicknesses to minimize overall substrate thickness. The flexible thin film approach maintains device performance while achieving the lightness and thinness required for modern flexible displays
4Illumination intensity
If polysilicon is used as the active layer, then high brightness and high resolution are achieved, but power consumption increases due to high leakage current
Solution Approach 1:
The patent creates a composite semiconductor structure by combining polysilicon and oxide semiconductor layers. The oxide semiconductor layer provides low leakage current characteristics to reduce power consumption, while the polysilicon layer maintains high brightness and resolution capabilities, achieving a synergistic effect
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces manufacturing costs, optimizes substrate thickness, and enhances flexible bending performance by minimizing hydrogen ion impact on the oxide semiconductor layer, thereby addressing power consumption and image retention issues.
Implementation Method 1
an intermediate insulating layer is disposed between the polysilicon semiconductor layer and the oxide semiconductor layer in the thin film transistor array substrate. The intermediate insulating layer can effectively prevent hydrogen ions generated during a hydrogenation process of the polysilicon semiconductor layer from diffusing to the oxide semiconductor layer
Data Source
AI summary
A thin film transistor array substrate and a display device are provided. The thin film transistor array substrate includes a first semiconductor layer, a second semiconductor layer, a first gate electrode, a conductive layer, a second gate electrode, a third gate electrode, and an intermediate insulating layer. The first semiconductor layer and the second semiconductor layer are made of different semiconductor materials. The first gate electrode and the conductive layer overlap with the first semiconductor layer. The second gate electrode and the third gate electrode overlap with the second semiconductor layer. The intermediate insulating layer is disposed between the second semiconductor layer and the second gate electrode.