Thin Film Transistor Substrate Oblique Electrode Aperture Ratio

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Solution Overview

Problem

The aperture ratio of display apparatuses decreases as resolution increases due to the limitations of light shielding layers in liquid crystal display devices, affecting the efficiency of light irradiation for image display.

Innovation Solution

A thin film transistor substrate design with oblique portions in the drain and source electrodes, reducing the length of thin film transistors in the second direction and enhancing the aperture ratio by optimizing the shape of the channel region, allowing for improved light irradiation and display efficiency.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If resolution of the display apparatus is increased, then image quality is improved, but the aperture ratio gradually decreases

Engineering Contradiction:
ImproveresolutionVSAvoidaperture ratio
Core Design Contradiction:
Measurement precisionVSArea of stationary object

Solution Approach 1:

The drain and source electrodes are designed with oblique portions that extend in directions between the first direction (gate line direction) and the second direction (data line direction). This three-dimensional spatial arrangement allows the electrodes to cover more area diagonally, effectively increasing the aperture ratio without compromising the transistor's functional dimensions in the primary directions.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The electrodes incorporate oblique portions that create angled or curved boundaries rather than straight rectangular edges. This geometric modification allows the electrodes to pack more efficiently within the pixel area, reducing wasted space and increasing the light-transmissive aperture ratio while maintaining electrical functionality.

Inventive Principle:
Principle #14Spheroidality (Curvature)

2Area of stationary object

If the length of thin film transistors in the second direction is reduced, then the aperture ratio is enhanced, but the transistor channel length may be insufficient

Engineering Contradiction:
Improveaperture ratioVSAvoidtransistor channel length
Core Design Contradiction:
Area of stationary objectVSLength of moving object

Solution Approach 1:

The oblique portions of the drain and source electrodes extend in directions between the first and second directions, utilizing the diagonal space within the pixel. This allows the transistor channel to achieve sufficient effective length for proper operation while the overall footprint in the second direction remains reduced, thereby enhancing the aperture ratio.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The drain and source electrodes feature asymmetric oblique portions with specific angles (30°-60°) relative to the gate line direction. This asymmetric design optimizes the electrode layout to maximize the aperture area while maintaining adequate channel length through the angled configuration, resolving the contradiction between compact size and functional performance.

Inventive Principle:
Principle #4Asymmetry

Data Source

PatentUS10234739B2Thin film transistor substrate and display apparatus
Publication Date: 2019.03.19 SAMSUNG DISPLAY CO LTD
  • US10234739B2 patent drawing
  • US10234739B2 patent drawing
  • US10234739B2 patent drawing

AI summary

A thin film transistor substrate includes a substrate and thin film transistors arranged in first and second directions above the substrate. Each thin film transistor includes a gate electrode, a drain electrode, a source electrode and a semiconductor layer. The drain electrode is above the gate electrode and includes a first drain oblique portion and a second drain oblique portion extending from an end portion of the first drain oblique portion. The source electrode is spaced apart from the drain electrode above the gate electrode and includes a first source oblique portion and a second source oblique portion extending from an end portion of the first source oblique portion. The semiconductor layer at least partially overlaps the gate electrode and includes a drain region to which the drain electrode is connected, a source region to which the source electrode is connected, and a channel region therebetween.