TFT Substrate Oxide Film Segmentation for Oxygen Defect Control

Solution Overview

Problem

Conventional methods for manufacturing thin-film transistor substrates with oxide semiconductor layers face issues of insufficient uniformity and reliability due to incomplete correction of oxygen defects, leading to poor electrical characteristics and uneven display performance.

Innovation Solution

A method involving the formation of an oxide semiconductor layer, followed by a first oxide film, oxidation processing, and a second oxide film, which reduces defects and enhances the reliability of the thin-film transistor substrate by improving the uniformity and stability of the electrical characteristics.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If heat treatment is performed on the oxide semiconductor layer to supply oxygen, then oxygen defects at the surface are corrected, but the uniformity and reliability of electrical characteristics remain insufficient

Engineering Contradiction:

Improveelectrical characteristic reliabilityVSAvoidelectrical characteristic uniformity

Core Design Contradiction:

ReliabilityVSManufacturing precision

Solution Approach 1:

The oxide film is divided into two distinct layers: a first oxide film in direct contact with the oxide semiconductor layer, and a second oxide film deposited on top of the first oxide film. This segmentation allows each layer to serve specific functions - the first oxide film provides oxygen supply to correct defects at the semiconductor interface, while the second oxide film protects the structure and maintains uniform electrical characteristics across the substrate.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The first oxide film is formed on the oxide semiconductor layer before subsequent processing steps. This preliminary formation of the oxide film ensures that oxygen is already present at the interface before any potential oxygen loss during manufacturing, thereby preventing oxygen defects rather than merely correcting them after they occur.

Inventive Principle:

Principle #10Preliminary action

2Ease of manufacture

If conventional single-layer oxide film structure is used, then manufacturing process is simple, but oxygen defects cannot be sufficiently corrected leading to poor electrical characteristics

Engineering Contradiction:

Improveprocess simplicityVSAvoidelectrical characteristic reliability

Core Design Contradiction:

Ease of manufactureVSReliability

Solution Approach 1:

The oxide film is divided into two distinct layers: a first oxide film in direct contact with the oxide semiconductor layer, and a second oxide film deposited on top of the first oxide film. This segmentation allows each layer to serve specific functions - the first oxide film provides oxygen supply to correct defects at the semiconductor interface, while the second oxide film protects the structure and maintains uniform electrical characteristics across the substrate.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The patent specifies different deposition conditions for the two oxide films, including controlling the oxygen partial pressure during deposition. By adjusting these parameters, the first oxide film can be optimized for oxygen supply to the semiconductor layer, while the second oxide film provides protective coverage, thereby improving electrical reliability without significantly complicating the manufacturing process.

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The proposed method results in a thin-film transistor substrate with improved uniformity and reliability, reducing oxygen defects and enhancing the stability of electrical characteristics, thereby addressing the limitations of conventional techniques.

Implementation Method 1

performing oxidation processing on the oxide semiconductor layer after formation of the first oxide film

Methodology Applied

Scientific EffectOxidation: Oxidation

Data Source

PatentUS10121898B2Thin-film transistor substrate and method of manufacturing the same

Publication Date: 2018.11.06 MAGNOLIA BLUE CORP

AI summary

A method of manufacturing a TFT substrate includes the steps of forming an oxide semiconductor layer above a substrate, forming a first oxide film on the oxide semiconductor layer, performing oxidation processing on the oxide semiconductor layer after formation of the first oxide film, and forming a second oxide film on the first oxide film after the oxidation processing.