Thin Film Transistor Substrate With Patterned Insulating Layer
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The existing methods for manufacturing thin film transistor substrates for liquid crystal display devices are time-consuming and reduce productivity due to the need to move substrates between different processing areas for metal and organic passivation layers, leading to potential contamination and mechanical stress.
Innovation Solution
A thin film transistor substrate with a gate wire and data wire crossing on an insulating substrate, forming a pixel area, an inorganic insulating layer with a prominence and depression pattern, and a reflective layer on the pattern, which allows for integrated formation of layers without substrate movement, enhancing productivity and reducing contamination risks.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If substrates are moved between different processing areas for metal layers and organic passivation layers, then separate specialized processing can be achieved, but processing time increases and productivity decreases
Solution Approach 1:
The patent combines the metal layer processing area and organic passivation layer processing area into a single integrated processing chamber. This allows both types of layers to be formed on the substrate without requiring physical movement between separate facilities, thereby maintaining specialized processing capabilities while dramatically improving productivity by eliminating transfer time and handling steps.
Solution Approach 2:
The processing chamber is designed with multi-functionality to handle both metal layer deposition and organic passivation layer formation processes. By equipping the single chamber with capabilities for both types of processing, the system achieves universality that eliminates the need for substrate movement while preserving the benefits of specialized processing for each layer type.
2Ease of manufacture
If substrates are moved between processing areas, then specialized processing is enabled, but substrate contamination and mechanical stress increase
Solution Approach 1:
By merging the metal layer and organic passivation layer processing areas into one chamber, the patent eliminates the physical movement of substrates between locations. This prevents contamination from occurring during transfer and avoids mechanical stress from handling and transportation, thereby maintaining substrate integrity while still enabling specialized processing for different layer types within the same controlled environment.
Data Source
AI summary
The present invention relates to a thin film transistor substrate. The thin film transistor according to one embodiment of the present invention comprises: a gate wire and a data wire formed to cross each other on an insulating substrate and define a pixel area; a thin film transistor formed on the intersection of the gate wire and the data wire; an inorganic insulating layer covering the thin film transistor and having a surface that a prominence and depression pattern formed on; and a reflective layer provided on the prominence and depression pattern. Thus, the present invention provides a thin film transistor substrate which reduces the time required in the process and enhance the productivity.