Thin Film Transistor Substrate Fabrication via Plasma Passivation
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Solution Overview
Problem
The fabrication of thin film transistor substrates for liquid crystal display devices involves a complex and costly process with multiple mask steps, increasing the overall cost and complexity of the liquid crystal display panel.
Innovation Solution
A method that reduces the number of mask processes by forming a thin film transistor substrate with a gate line, data line, and semiconductor pattern, using a semiconductor passivation film to protect the channel, and forming a storage capacitor with a storage electrode overlapping the gate line, which simplifies the fabrication process and reduces manufacturing costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If multiple mask processes are used in the fabrication of thin film transistor substrate, then the manufacturing precision and reliability are improved, but the device complexity and manufacturing cost increase
Solution Approach 1:
The patent combines multiple mask processes into a single integrated process. Specifically, the gate pattern, pixel electrode pattern, and semiconductor pattern are formed simultaneously using one mask process, eliminating the need for separate mask steps that would otherwise be required for each pattern formation. This merging approach maintains the necessary manufacturing precision while significantly reducing process complexity.
Solution Approach 2:
The single mask process serves multiple functions: it defines the gate pattern, pixel electrode pattern, and semiconductor pattern all in one step. The mask layer acts as a universal template that simultaneously controls the formation of multiple critical structures, making the process multi-functional and eliminating the need for multiple specialized mask steps.
2Manufacturing precision
If multiple mask processes are used in the fabrication of thin film transistor substrate, then the manufacturing precision is improved, but the productivity decreases
Solution Approach 1:
By merging multiple mask processes into a single integrated step, the patent reduces the total number of fabrication steps required. This consolidation maintains the precision needed for gate, pixel electrode, and semiconductor patterns while reducing the time and resources required for multiple sequential mask operations, thereby improving manufacturing efficiency.
3Reliability
If additional passivation film deposition equipment is used, then the reliability of the semiconductor channel is improved, but the device complexity and manufacturing cost increase
Solution Approach 1:
The semiconductor layer itself provides passivation functionality by forming a protective interface with the gate insulating film. The amorphous semiconductor material inherently protects the channel region without requiring an additional separate passivation film deposition step, making the system self-sufficient and eliminating the need for extra equipment.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach simplifies the fabrication process, reduces manufacturing costs, and improves yield by completing the thin film transistor array substrate in three mask processes without a lift-off or pad open process, while protecting the active layer with a semiconductor passivation film, thus avoiding additional passivation film deposition equipment.
Implementation Method 1
The semiconductor passivation film contains a plasma-exposed semiconductor
Data Source
AI summary
A thin film transistor substrate and method of fabrication is presented. The thin film transistor includes gate and data lines forming a pixel area and separated by a gate insulating layer on a LCD substrate. A thin film transistor in the pixel area has a semiconductor pattern which forms a channel. A pixel electrode in the pixel area contains a transparent conductive film. A gate metal film is adjacent to a portion of transparent conductive film in the pixel area. A semiconductor passivation film is formed by exposing the semiconductor in the channel to an oxygen or nitrogen plasma. A gate pad connected with the gate line contains the transparent film in a pad section and the transparent film and the gate film in a connection area connecting the gate pad and the gate line. A data pad connected with the data line contains the transparent film.