Thin Film Transistor Surface Charge Transfer Layer
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Solution Overview
Problem
Traditional ion implantation doping methods for thin film transistors can damage the semiconductor lattice structure, leading to reduced carrier lifetime and mobility, limiting performance improvement.
Innovation Solution
A thin film transistor with a surface charge transfer layer in contact with the semiconductor active region, generating holes without altering the lattice structure, using molybdenum trioxide and zinc oxide materials to enhance carrier mobility and lifetime.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If ion implantation doping method is used to dope semiconductor active region, then impurity ions are introduced to convert into doped semiconductor active region, but lattice structure is damaged and carrier lifetime and mobility are reduced
Solution Approach 1:
The patent introduces a surface charge transfer layer as an intermediary between the gate and the semiconductor active region. This layer mediates the doping process by transferring charges to the semiconductor surface through field effect, avoiding direct ion implantation that damages the lattice. The surface charge transfer layer acts as a buffer that enables doping without the harmful mechanical impact of ion bombardment.
Solution Approach 2:
The patent replaces the mechanical ion implantation process with an electrical field effect mechanism. Instead of physically accelerating ions into the semiconductor lattice (mechanical process), the invention uses an electric field generated by the gate to induce charge transfer to the semiconductor surface (electrical process), thereby avoiding lattice damage while achieving the desired doping effect.
2Quantity of substance
If ion implantation is performed to accelerate impurity ions into semiconductor material, then doping is achieved, but lattice integrity and periodicity are destroyed causing lattice defects
Solution Approach 1:
The surface charge transfer layer serves as an intermediary that enables charge transfer without direct ion impact on the lattice. This mediator layer protects the semiconductor lattice from the damaging effects of ion implantation while still achieving the desired increase in carrier concentration through field-induced charge transfer.
Solution Approach 2:
The patent changes the fundamental parameter of the doping mechanism from mechanical ion implantation to electrical field effect. By altering the method from physical bombardment to electrical induction, the lattice structure remains intact while achieving the same functional outcome of increased carrier concentration.
3Reliability
If traditional doping methods are used to improve carrier mobility, then some performance improvement is achieved, but lattice defects limit further performance enhancement
Solution Approach 1:
The patent replaces the mechanical ion implantation system with an electrical field effect system. This substitution eliminates the lattice-damaging mechanical impact while maintaining the ability to control carrier concentration and mobility through electrical parameters, thereby achieving performance improvement without the limiting factor of lattice defects.
Solution Approach 2:
The surface charge transfer layer acts as a protective intermediary that enables doping without direct ion-lattice interaction. This mediator allows for performance enhancement through controlled charge transfer while preventing the formation of lattice defects that would otherwise limit further mobility improvement.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively increases carrier mobility and lifetime by generating holes in the semiconductor active region without damaging the lattice, thereby improving the performance of the thin film transistor.
Implementation Method 1
the surface charge transfer layer is used for causing the semiconductor active region to generate a large number of holes therein without changing the lattice structure of the semiconductor active region
Data Source
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AI summary
The present invention provides a thin film transistor and a manufacturing method thereof, an array substrate, and a display apparatus, which can solve the problem that the performance of the thin film transistor in the prior art is lowered when the semiconductor active region is converted into a doped semiconductor active region so that the lattices of the semiconductor active region itself are destroyed by the doped impurity ions. The thin film transistor of the present invention comprises a gate, a gate insulation layer, a semiconductor active region, and a source and a drain connected with the semiconductor active region, and further comprises a surface charge transfer layer in contact with the semiconductor active region, the surface charge transfer layer is located above or below the semiconductor active region, and is used for causing the semiconductor active region to generate a large number of holes or electrons therein without changing the lattice structure of the semiconductor active region. In the thin film transistor, charge transfer occurs between the semiconductor active region and the surface charge transfer layer so that the doped semiconductor active region is formed, thus the performance of the thin film transistor is significantly improved.