UV-Attenuating TFT Channel Protection During IMD UV Curing
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Solution Overview
Problem
Oxide semiconductor materials used in thin film transistors (TFTs) are prone to characteristic degradation due to ultraviolet (UV) light used in the UV curing process for forming low or very low k intermetal dielectric (IMD) layers in semiconductor manufacturing.
Innovation Solution
Incorporating a UV-attenuating layer on the channel layer of TFTs, which can be made of materials like molybdenum oxide, molybdenum-doped zinc oxide, silicon nitride, or InGaZnO:N, to act as a shielding layer during the UV curing process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If UV curing process is used to form low or very low k intermetal dielectric layer, then productivity and manufacturing efficiency are improved, but the oxide semiconductor channel layer suffers from characteristic degradation due to UV light exposure
Solution Approach 1:
A UV-attenuating layer is introduced as an intermediary component between the UV curing process and the oxide semiconductor channel layer. This layer selectively absorbs or attenuates UV light wavelengths that cause degradation to the channel layer while permitting the UV curing process to proceed for the intermetal dielectric layer formation, thereby protecting the channel layer without compromising manufacturing productivity
Solution Approach 2:
The UV-attenuating layer is positioned specifically at the location where UV protection is most critical—directly over the oxide semiconductor channel layer—while allowing other regions to undergo standard UV curing. This localized approach protects vulnerable areas without interfering with the overall curing process efficiency
2Reliability
If UV-attenuating layer is added to protect channel layer from UV degradation, then channel layer stability is improved, but device structure and manufacturing process become more complex
Solution Approach 1:
The UV-attenuating layer is designed to serve multiple functions simultaneously: it acts as a UV shield to protect the channel layer, serves as an additional dielectric layer in the device structure, and can function as part of the intermetal dielectric system. This multi-functionality reduces the need for separate protective layers and minimizes overall structural complexity
Solution Approach 2:
The UV-attenuating function is merged with existing device layers rather than being implemented as a completely separate component. The UV-attenuating material is integrated into the intermetal dielectric stack, combining the protective function with the electrical insulation function already required in the device architecture
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The UV-attenuating layer effectively protects the channel layer from degradation caused by UV light, ensuring the stability and performance of TFTs in semiconductor manufacturing.
Implementation Method 1
a UV-attenuating layer disposed on the channel layer to protect the channel layer from characteristic degradation caused by UV light
Data Source
AI summary
A transistor device includes a first source/drain region and a second source/drain region spaced apart from each other; a channel layer electrically connected to the first and second source/drain regions; a gate insulator layer; a gate electrode isolated from the channel layer by the gate insulator layer; and a UV-attenuating layer disposed on the channel layer to protect the channel layer from characteristic degradation caused by UV light.