Thin Film Transistor Wiring Layer Compensation for Etching

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Solution Overview

Problem

Conventional methods for manufacturing thin film transistors using metal oxide semiconductors result in partial surface loss during the etching process, leading to degradation of electrical characteristics due to etchant-induced surface composition changes and residue generation.

Innovation Solution

Incorporating a compensation layer formed from a metal oxide component, such as molybdenum and zinc, into the wiring layer to compensate for semiconductor layer losses and suppress residue generation during etching, thereby maintaining optimal surface composition and improving electrical characteristics.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If the back channel etching method is used to manufacture thin film transistor, then the manufacturing process can be completed with conventional four mask processes, but the etchant causes partial loss of the metal oxide semiconductor surface resulting in degradation of electrical characteristics

Engineering Contradiction:

Improvemanufacturing process feasibilityVSAvoidsurface composition precision

Core Design Contradiction:

Ease of manufactureVSManufacturing precision

Solution Approach 1:

A compensation layer is formed on the metal oxide semiconductor layer before the etching process. This preliminary action ensures that when etching occurs, the compensation layer dissipates etchant before it reaches the semiconductor layer, preventing surface composition changes and electrical characteristic degradation while allowing the conventional four mask process to proceed

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

The compensation layer acts as an intermediary between the etchant and the metal oxide semiconductor layer. It absorbs the harmful effect of the etchant through controlled etching of the compensation layer itself, protecting the underlying semiconductor layer from damage while enabling the etching process to proceed

Inventive Principle:

Principle #24Intermediary (Mediator)

2Ease of manufacture

If the back channel etching method is applied, then the thin film transistor can be manufactured using conventional processes, but residue is generated during the etching process affecting reliability

Engineering Contradiction:

Improveprocess conventionalizationVSAvoiddevice reliability

Core Design Contradiction:

Ease of manufactureVSReliability

Solution Approach 1:

The compensation layer serves as a sacrificial intermediary that absorbs etchant and prevents direct contact with the metal oxide semiconductor layer. This intermediary action eliminates residue generation on the semiconductor layer while maintaining compatibility with conventional etching processes

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The compensation layer is designed to be intentionally etched away, converting the potentially harmful etching process into a beneficial protective mechanism. The controlled removal of the compensation layer protects the semiconductor layer from damage and residue formation

Inventive Principle:

Principle #22Blessing in disguise (Convert harm into benefit)

Data Source

PatentUS10340294B2Method for manufacturing thin film transistor, and thin film transistor

Publication Date: 2019.07.02 IND UNIV COOP FOUND KOAEA AEROSPACE UNIV

AI summary

Disclosed is a method for manufacturing a thin film transistor. The method for manufacturing a thin film transistor includes: forming a patterned semiconductor layer and a patterned wiring layer on a substrate; and etching the wiring layer to form a channel part. Herein, the wiring layer includes a compensation layer and the compensation layer is formed from a material including a metal of a metal oxide component among components of a material forming the semiconductor layer.