Integrated Thermal ALD-PECVD Coating for Uniform TOPCon Passivation
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Solution Overview
Problem
Existing tubular PECVD apparatuses face challenges in maintaining the shape-retention of thin films on textured morphology and achieving uniformity in aluminum oxide deposition, while plasma technologies can cause surface damage, hindering optimal passivation in TOPCon cell production.
Innovation Solution
A substrate treating apparatus integrating a thermal ALD processing unit with a PECVD processing unit, utilizing a combination of carrier gas and oxidant pipelines to ensure uniform deposition of aluminum oxide and silicon nitride, with controlled fluid valves and an ozone generator to prevent surface damage and enhance passivation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If ion enhanced PECVD process is used for aluminum oxide deposition, then deposition speed is improved, but shape-retention of thin film on texturing morphology deteriorates and deposition uniformity worsens
Solution Approach 1:
The patent changes the deposition method from ion-enhanced PECVD to thermal ALD, altering the fundamental process parameters (temperature, pressure, gas flow patterns) to achieve both shape-retention and deposition uniformity while maintaining acceptable deposition speeds through optimized thermal reaction conditions
Solution Approach 2:
The patent employs an inert carrier gas environment in thermal ALD to deliver aluminum precursors without plasma ion bombardment, protecting the texturing morphology while enabling controlled deposition through thermal reactions at elevated temperatures
2Productivity
If plasma technology is used for deposition, then deposition efficiency is improved, but surface damage increases causing poor passivation effect
Solution Approach 1:
The patent replaces the plasma-based mechanical/chemical bombardment process with a thermal ALD process that uses controlled thermal reactions, eliminating ion-induced surface damage while maintaining deposition efficiency through optimized temperature and gas flow parameters
Solution Approach 2:
The patent changes the energy delivery mechanism from plasma (electromagnetic field with ion bombardment) to thermal energy (controlled heating), fundamentally altering how deposition occurs to protect the surface while maintaining productivity
3Manufacturing precision
If multiple separate equipment is used for different deposition processes, then process specialization is improved, but device complexity and manufacturing cost increase
Solution Approach 1:
The patent combines thermal ALD and PECVD processing units into a single integrated apparatus with shared components (vacuum system, substrate holder, control systems), reducing equipment complexity and manufacturing cost while maintaining the specialization of each deposition process through separate gas delivery and reaction zones
Solution Approach 2:
The patent designs a multi-functional apparatus that can perform both thermal ALD and PECVD processes using shared infrastructure components, allowing the same equipment to execute different deposition methodologies with appropriate parameter adjustments without requiring completely separate specialized machines
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution ensures uniform and stable deposition of aluminum oxide, improving shape-retention and passivation effects, reducing surface damage, and enhancing the quality of film layers, thereby achieving better performance in TOPCon cell production.
Implementation Method 1
when the carrier gas is introduced into the source bottle, the carrier gas carries the chemical source before entering the apparatus cavity
Implementation Method 2
performing a thermal atomic layer deposition onto the substrate on a tubular PECVD equipment platform
Implementation Method 3
an existing tubular plasma enhanced chemical vapor deposition (PECVD) apparatus utilizes an ion enhanced technology to carry out deposition of various film layers
Implementation Method 4
the first fluid valves are applied to controlling whether the chemical source flows through the first pipelines or not; while the second fluid valves are applied to controlling whether the oxidant flows through the second pipelines or not
Data Source
AI summary
Provided is substrate treating apparatus and method. Apparatus has thermal ALD processing unit and PECVD processing unit integrated. Thermal ALD processing unit comprises carrier gas source, first pipelines, second pipelines, source bottle, oxidation source, first fluid valves, second fluid valves and apparatus cavity; apparatus cavity accommodates substrate, serves as reaction place for substrate; first pipelines and second pipelines are transmitting carrier gas to cavity; carrier gas source provides carrier gas: oxidation source provides oxidizing agent; source bottle accommodates chemical source; when introduced into source bottle, carrier gas carries chemical source into apparatus; first fluid valves controls chemical source to flow or not through first pipelines; second fluid valves controls oxidizing agent to flow or not through second pipelines. Apparatus carries out hot atomic layer deposition on substrate on tubular PECVD apparatus platform, combines aluminum oxide deposition process and silicon nitride deposition process into one apparatus.