Thermal-Assisted Fuse Cell for Low-Voltage Programming
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Solution Overview
Problem
EFuse memory devices and OTP memory devices face challenges with low density, large size, and the need for high voltage for programming, which becomes increasingly difficult as technology advances and semiconductor devices are scaled down.
Innovation Solution
The proposed solution involves a thermal-assisted fuse or OTP cell that uses a heater, such as a transistor or resistor, to raise the temperature of the memory element, reducing the need for high current or voltage during programming and enabling smaller selector sizes and higher memory density.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If high voltage is used for programming EFuse or OTP memory devices, then programming can be achieved, but the device size increases and density decreases
Solution Approach 1:
The patent changes the programming parameter from high voltage to elevated temperature. By heating the memory element to a specific temperature range, the fuse can be broken at lower voltages, thus reducing the area required for the device while maintaining programming capability
Solution Approach 2:
The patent introduces a heater as an intermediary component that mediates between the programming signal and the fuse element. The heater converts electrical energy to thermal energy, which then acts on the fuse to break it, enabling low-voltage programming
2Reliability
If high voltage is used for programming, then fuse breaking can be achieved, but power consumption increases
Solution Approach 1:
The patent changes the dominant programming parameter from voltage to temperature. By controlling the temperature through a heater, the system achieves fuse breaking at reduced voltage levels, thereby lowering overall power consumption during programming operations
Solution Approach 2:
The heating process is applied periodically or in controlled pulses to reach the required temperature for fuse breaking, rather than maintaining continuous high voltage, which reduces average power consumption
3Productivity
If device size is reduced for higher density, then more memory cells fit, but programming becomes more difficult
Solution Approach 1:
The heater acts as an intermediary that enables reliable fuse breaking in miniaturized structures. By providing thermal energy locally, the heater compensates for the increased difficulty of programming smaller fuse elements, allowing high-density configurations to be manufactured effectively
4Area of moving object
If selector size is reduced, then cell area decreases and density increases, but control capability may be compromised
Solution Approach 1:
The patent changes the programming mechanism to rely on temperature rather than high voltage. This allows smaller selectors to be used because the thermal effect can be applied uniformly across the fuse element, maintaining control capability even with reduced selector dimensions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for a significant reduction in program voltage, smaller cell sizes, and higher memory density, while also improving reliability due to lower operation voltages.
Implementation Method 1
a thermal-assisted fuse or OTP cell that uses a heater, such as a transistor or resistor, to raise the temperature of the memory element
Data Source
AI summary
The present disclosure provides a memory device, a semiconductor device, and a method of operating a memory device. A memory device includes a memory cell, a bit line, a word line, a select transistor, a fuse element, and a heater. The bit line is connected to the memory cell. The word line is connected to the memory cell. The select transistor is disposed in the memory cell. A gate of the select transistor is connected to the word line. The fuse element is disposed in the memory cell. The fuse element is connected to the bit line and the select transistor. The heater is configured to heat the fuse element.