Thermal Conductive Layer for Semiconductor Heat Dissipation
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Solution Overview
Problem
Conventional thermal conductive layers fail to achieve the required thermal conductivity for recent semiconductor devices, leading to inadequate heat dissipation and potential malfunctions due to increased power consumption and heat generation in laminated LSI devices.
Innovation Solution
A thermal conductive layer with a thermal diffusivity of 5.0×10−7 m2 s−1 or more and a volume resistivity of 1.0×1011 Ω·cm or more, incorporating fillers such as boron nitride, aluminum nitride, or magnesium oxide with an average primary particle diameter of 10 μm or less and an aspect ratio of 2 or more, combined with a photosensitive layer for patterned shape formation and alkaline development.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If conventional thermal conductive materials are used, then the structure is simple and easy to manufacture, but the thermal conductivity is insufficient for recent semiconductor devices
Solution Approach 1:
The patent employs composite materials by combining multiple filler types (boron nitride, aluminum nitride, magnesium oxide) with specific resin components to achieve the required thermal conductivity of 5.0×10−7 m2 s−1 or more. This composite approach allows the material to meet high thermal performance requirements while maintaining manufacturability through established fabrication processes.
2Temperature
If high thermal conductivity materials are used, then heat dissipation is improved, but electrical insulation may be compromised
Solution Approach 1:
The patent applies local quality by selecting fillers with specific properties for specific functions: boron nitride and aluminum nitride provide thermal conductivity, while magnesium oxide contributes to both thermal conductivity and electrical insulation. The controlled particle distribution and aspect ratio (2 or more) ensure thermal pathways are established without compromising the electrical insulation barrier, achieving thermal conductivity of 5.0×10−7 m2 s−1 or more while maintaining volume resistivity of 1.0×1011 Ω·cm or more.
3Temperature
If filler particle size is reduced to improve thermal conductivity, then heat dissipation performance increases, but manufacturing precision requirements increase
Solution Approach 1:
The patent optimizes the particle size parameter by specifying an average primary particle diameter of 10 μm or less with an aspect ratio of 2 or more. This parameter control strikes a balance between achieving high thermal conductivity through fine particle distribution and maintaining manufacturability within standard fabrication tolerances. The specific parameter range allows for effective thermal conduction pathways while remaining compatible with conventional manufacturing processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides superior thermal conductivity and electrical insulation, effectively suppressing heat-related adverse effects in semiconductor devices, ensuring reliable operation and reduced power consumption.
Implementation Method 1
a thermal conductive layer having a thermal diffusivity of 5.0×10−7 m2 s−1 or more and a volume resistivity of 1.0×1011 Ω·cm or more
Implementation Method 2
a photosensitive layer for patterned shape formation and alkaline development
Data Source
AI summary
The present invention relates to a thermal conductive layer that includes at least one filler, has a thermal diffusivity of 5.0×10−7 m2s−1 or more, and has a volume resistivity of 1.0×1011 Ω·cm or more. Further, the present invention relates to a photosensitive layer to which the thermal conductive layer is applied, a photosensitive composition, a manufacturing method for a thermal conductive layer, and a laminate and a semiconductor device.