Thermal Conductivity Layer for Semiconductor Package Heat Dissipation

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Solution Overview

Problem

Microelectronics device packages face poor heat dissipation due to low thermal conductivity of molding compounds, leading to localized overheating, and back-side grinding processes can cause delamination and damage to semiconductor chips.

Innovation Solution

A thermal conductivity layer with high thermal conductivity (between 3 W/m-K and 10 W/m-K) is attached to the chip, providing a heat dissipation path and mechanical support, and a molding compound is formed above the substrate to encapsulate the chip and thermal conductivity layer, eliminating the need for back-side grinding.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Temperature

If a thermal management device is attached to the wafer for heat dissipation, then heat dissipation is improved, but the molding compound may become delaminated from the wafer during back-side grinding

Engineering Contradiction:

Improveheat dissipationVSAvoidmolding compound adhesion

Core Design Contradiction:

TemperatureVSReliability

Solution Approach 1:

A thermal conductivity layer is formed on the wafer surface before attaching the thermal management device, creating a preparatory structure that enables heat dissipation while preventing subsequent delamination during grinding processes

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

The molding compound is formulated as a composite material with enhanced mechanical properties and controlled curing characteristics, allowing it to maintain adhesion to the wafer even when thermal management devices are attached and back-side grinding is performed

Inventive Principle:

Principle #40Composite materials

2Length of moving object

If back-side grinding is performed to reduce molding compound thickness, then heat dissipation path is shortened, but the molding compound becomes undone or delaminated

Engineering Contradiction:

Improvemolding compound thicknessVSAvoidmolding compound integrity

Core Design Contradiction:

Length of moving objectVSReliability

Solution Approach 1:

The thermal conductivity layer is formed in advance on the wafer surface, providing a stable foundation that allows subsequent back-side grinding to proceed without causing delamination of the molding compound

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

The molding compound's mechanical and thermal parameters are modified through composite formulation and controlled curing, enabling it to withstand back-side grinding while maintaining adhesion and providing effective heat dissipation

Inventive Principle:

Principle #35Parameter changes

3Object-affected harmful factors

If the molding compound is used as encapsulation material, then chip protection is provided, but the low thermal conductivity creates a barrier to heat dissipation

Engineering Contradiction:

Improvechip protectionVSAvoidheat dissipation

Core Design Contradiction:

Object-affected harmful factorsVSTemperature

Solution Approach 1:

The molding compound is developed as a composite material that simultaneously provides mechanical protection for the chip and improved thermal conductivity to enable effective heat dissipation, eliminating the trade-off between protection and thermal performance

Inventive Principle:

Principle #40Composite materials

Solution Approach 2:

A thermal conductivity layer serves as an intermediary between the chip and the molding compound, facilitating heat transfer from the chip through the encapsulation material to the heat sink, thereby maintaining both protection and heat dissipation functions

Inventive Principle:

Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The thermal conductivity layer effectively dissipates heat generated by the chip, preventing overheating and minimizing damage during handling, while the molding compound encapsulation provides protection and stiffness without causing warpage or delamination.

Implementation Method 1

A thermal conductivity layer with high thermal conductivity (between 3 W/m-K and 10 W/m-K) is attached to the chip, providing a heat dissipation path

Methodology Applied

Scientific EffectThermal conduction: Conduction (thermal)

Implementation Method 2

a molding compound is formed above the substrate to encapsulate the chip and thermal conductivity layer

Methodology Applied

Scientific EffectEncapsulation: Physical Containment

Data Source

PatentUS11574886B2Thermally conductive molding compound structure for heat dissipation in semiconductor packages

Publication Date: 2023.02.07 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD

AI summary

The present disclosure, in some embodiments, relates to a semiconductor package. The semiconductor package includes a first chip and a second chip attached to a substrate. A thermal conductivity layer is attached to the first chip. A molding compound laterally surrounds the first chip, the second chip, and the thermal conductivity layer. The second chip extends from the substrate to an imaginary horizontally extending line that extends along a horizontally extending surface of the thermal conductivity layer facing away from the substrate. The imaginary horizontally extending line is parallel to the horizontally extending surface.