Thermal Dissipation Trench for Integrated Circuit Heat Management
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Solution Overview
Problem
The accumulation of heat in semiconductor substrates due to integrated optical components, such as lasers, poses a challenge for the operational longevity of opto-electronic integrated circuits, as conventional heat dissipation methods are inadequate for efficient thermal management.
Innovation Solution
A thermal dissipation structure is implemented within the semiconductor substrate, featuring a thermal dissipation trench and metal layers with good thermal conductivity, allowing for direct heat transfer to a flowing heat transfer fluid, thereby minimizing the distance between the integrated circuits and the dissipation channel and enhancing heat transfer efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If conventional heat dissipation methods are used, then the structure is simple, but heat dissipation efficiency is insufficient
Solution Approach 1:
The patent transitions from conventional surface-level or external heat dissipation methods to a three-dimensional approach by etching trenches directly into the semiconductor substrate. This dimensional change allows heat dissipation channels to be embedded within the substrate volume, significantly improving thermal coupling between the integrated circuits and the heat dissipation structure while maintaining manufacturing feasibility through standard semiconductor fabrication processes.
Solution Approach 2:
The patent embeds the heat dissipation trenches and fluid channels directly within the semiconductor substrate, creating a nested structure where the cooling system is integrated inside the substrate itself. This nesting approach allows the heat dissipation structure to be positioned in optimal thermal locations without adding external components, thereby improving heat dissipation efficiency while keeping the overall device compact.
2Reliability
If thermal dissipation trench is formed within semiconductor substrate, then heat dissipation efficiency is improved, but manufacturing complexity increases
Solution Approach 1:
The patent divides the semiconductor substrate into distinct regions: active regions containing integrated circuits and heat dissipation regions containing trenches. This segmentation allows different fabrication processes to be applied to different areas, with trenches formed in non-active areas using standard etching techniques. The segmentation strategy enables complex thermal management functionality to be integrated without significantly complicating the overall manufacturing process.
Solution Approach 2:
The patent incorporates heat dissipation trench formation as an early step in the semiconductor fabrication process, before the integrated circuits are fully assembled and operational. By preparing the thermal management structure in advance during manufacturing, the system ensures optimal thermal coupling from the outset without requiring additional complex assembly steps or post-processing modifications.
3Reliability
If metal layers with good thermal conductivity are used, then heat transfer efficiency is enhanced, but material complexity increases
Solution Approach 1:
The patent changes the thermal conductivity parameter of the heat dissipation structure by filling trenches with metal materials such as copper or aluminum, which have significantly higher thermal conductivity than the semiconductor substrate material. This parameter change dramatically enhances heat transfer efficiency from the integrated circuits to the cooling fluid. The use of standard metals compatible with semiconductor fabrication processes minimizes material complexity while achieving superior thermal performance.
Solution Approach 2:
The patent creates a composite structure combining the semiconductor substrate with metal heat dissipation layers and cooling fluid channels. This composite material approach leverages the complementary properties of each material: the semiconductor substrate provides the active circuit functionality, while the metal layers provide high thermal conductivity for efficient heat transfer to the cooling fluid, achieving optimal thermal management through material combination.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution effectively dissipates heat generated by opto-electronic integrated circuits, ensuring their operational longevity by utilizing a thermal dissipation channel with a metal seed layer and electroplated metal layer for efficient heat transfer, even with complex channel geometries and materials like copper.
Implementation Method 1
The metal seed layer and the metal layer are connected to the heat transfer fluid to further transfer the heat
Implementation Method 2
heat transfer fluid can flow through the heat dissipation channel, so that the heat of the integrated circuit can be transferred to the heat transfer fluid
Implementation Method 3
The metal layer is an electroplated layer formed from the seed layer
Data Source
AI summary
A thermal dissipation structure for integrated circuits includes a semiconductor substrate, a thermal dissipation trench, a metal seed layer and a metal layer. The semiconductor substrate has a first surface and a second surface which is opposite to the first surface. Integrated circuits are located on and thermally coupled with the first surface. The thermal dissipation trench is formed within the second surface. The metal seed layer seals the thermal dissipation trench to define a thermal dissipation channel. The thermal dissipation channel includes an inlet and an outlet. The metal layer is an electroplated layer formed from the metal seed layer.