Thermal Dummy Insertion for Semiconductor Thermal Uniformity
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Solution Overview
Problem
Current semiconductor manufacturing processes, particularly at advanced technology nodes like 65 nm, 45 nm, or 30 nm and below, face significant challenges due to non-uniform thermal annealing, leading to variations in electrical performance across semiconductor devices, degrading the overall quality of integrated circuits.
Innovation Solution
The method involves creating an integrated circuit (IC) design layout with thermal dummy features and using a thermal model incorporating optical simulation and silicon calibration to optimize thermal uniformity. This includes generating a thermal image profile, defining thermal targets, and performing thermal dummy insertion based on difference data to achieve uniform annealing effects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If thermal annealing is applied to semiconductor wafer, then electrical performance of semiconductor devices is improved, but thermal uniformity across the wafer deteriorates
Solution Approach 1:
The patent applies local quality by inserting dummy features specifically in regions where thermal uniformity is deficient. The dummy insertion is not uniform across the entire wafer but is strategically placed in low-pattern-density areas to provide localized thermal compensation. This resolves the contradiction by maintaining high electrical performance through targeted thermal adjustment without requiring global thermal modification that would compromise overall device quality.
Solution Approach 2:
The patent employs preliminary action by performing thermal simulation and dummy insertion during the IC design layout phase, before actual fabrication. The thermal model predicts thermal distribution patterns, and dummy features are pre-positioned to compensate for anticipated thermal non-uniformity. This preliminary intervention ensures that when thermal annealing is subsequently applied, the wafer achieves uniform thermal exposure, thereby improving electrical performance while maintaining thermal uniformity.
2Temperature
If dummy features are inserted to improve thermal uniformity, then thermal annealing uniformity is improved, but IC design layout complexity increases
Solution Approach 1:
The patent applies self-service by implementing an automated workflow where the thermal simulation model automatically identifies regions requiring thermal compensation and generates dummy feature placements. The system self-adjusts the IC design layout by inserting dummy features in low-pattern-density areas without requiring manual intervention. This automation resolves the contradiction by achieving thermal uniformity improvement while minimizing the burden of layout complexity through algorithmic rather than manual processes.
Solution Approach 2:
The patent employs parameter changes by modifying the physical parameters of the IC design layout—specifically, adding dummy features with controlled dimensions, materials, and spatial distributions. These parameter adjustments are optimized to provide thermal compensation while maintaining compatibility with fabrication constraints. The dummy features are inserted only where pattern density is low, ensuring that the changes to layout complexity are minimized while still achieving the desired thermal annealing uniformity.
3Manufacturing precision
If thermal simulation and dummy insertion are performed, then manufacturing precision is improved, but process time and computational resources increase
Solution Approach 1:
The patent applies partial action by performing thermal simulation and dummy insertion only in regions where thermal non-uniformity is predicted to be significant—specifically in low-pattern-density areas. Rather than analyzing and modifying the entire wafer uniformly, the process focuses computational resources on critical regions that require thermal compensation. This selective approach resolves the contradiction by achieving adequate thermal uniformity control while reducing the overall computational burden and process time compared to a full-wafer analysis.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach ensures improved thermal and electrical uniformity across the IC, enhancing the performance and quality of semiconductor devices by optimizing the thermal annealing process, thereby meeting specific product specifications.
Implementation Method 1
providing a thermal model for simulating thermal effect on the IC design layout, the thermal model including optical simulation and silicon calibration
Implementation Method 2
providing a thermal model for simulating thermal effect on the IC design layout, the thermal model including rigorous coupled-wave analysis (RCWA) optical simulation and silicon calibration
Implementation Method 3
providing a convolution of the thermal model and the IC design layout to generate a thermal image profile of the IC design layout
Data Source
AI summary
The present disclosure provides integrated circuit methods for target-based dummy insertion. A method includes providing an integrated circuit (IC) design layout, and providing a thermal model for simulating thermal effect on the IC design layout, the thermal model including optical simulation and silicon calibration. The method further includes providing a convolution of the thermal model and the IC design layout to generate a thermal image profile of the IC design layout, defining a thermal target for optimizing thermal uniformity across the thermal image profile, comparing the thermal target and the thermal image profile to determine a difference data, and performing thermal dummy insertion to the IC design layout based on the difference data to provide a target-based IC design layout.