Thermal Etching of High-K Films Using Halide Gas
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Solution Overview
Problem
Current methods for removing high dielectric constant films from semiconductor processing chambers, such as plasma etching, are costly and may not achieve high etching rates, while thermal etching methods often result in prolonged cleaning times and low productivity.
Innovation Solution
A method using halide gas and oxygen-based gas, with an oxygen concentration less than 7%, is employed to clean the processing chamber, optimizing etching conditions like temperature and pressure to enhance the etching rate in thermal etching.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If plasma etching is used to remove high dielectric constant films, then etching rate can be improved, but manufacturing cost increases due to plasma generation equipment
Solution Approach 1:
The patent replaces the plasma generation system (electromagnetic field-based) with a thermal field-based etching system using halide gas and oxygen-based gas at controlled temperatures and pressures. This substitution eliminates the need for expensive plasma generation equipment while achieving comparable etching rates through thermal activation of the etching gas.
Solution Approach 2:
The patent changes the operational parameters from plasma conditions (electromagnetic activation, low pressure) to thermal conditions (controlled temperature 200-600°C, controlled pressure 10-1000 Pa). By optimizing these parameters, particularly maintaining oxygen concentration below 7%, the system achieves high etching rates without plasma generation costs.
2Ease of manufacture
If thermal etching is used to clean the processing chamber, then manufacturing cost is reduced, but cleaning time is prolonged and productivity decreases
Solution Approach 1:
The patent optimizes thermal etching parameters by controlling temperature (200-600°C), pressure (10-1000 Pa), and gas composition (halide gas with oxygen-based gas at less than 7% concentration). These parameter optimizations significantly accelerate the thermal etching rate, reducing cleaning time while maintaining cost advantages over plasma methods.
Solution Approach 2:
The patent uses a composite gas system combining halide gas (primary etching agent) with oxygen-based gas (oxidizing agent) in specific proportions. This composite gas mixture enhances the etching reaction efficiency and speed, allowing rapid removal of high dielectric constant films without requiring plasma activation.
3Speed
If oxygen concentration is increased in the etching gas, then etching rate may improve, but selectivity and control of the etching process deteriorate
Solution Approach 1:
The patent identifies and controls the oxygen concentration parameter, maintaining it below 7% in the etching gas mixture. This parameter optimization balances etching rate with selectivity, preventing excessive oxidation that would reduce etching precision while still achieving high removal rates through the synergistic effect of halide gas and controlled oxygen.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for high-speed removal of high dielectric constant films without the need for plasma generation, reducing manufacturing costs and improving productivity by increasing etching rates and selectivity.
Implementation Method 1
etching methods by heating gas without using plasma (hereinbelow referred to as thermal etching)
Implementation Method 2
supplying halide gas and oxygen based gas into the processing chamber, then removing the deposit including the high dielectric constant film deposited on the inside of the processing chamber
Data Source
AI summary
To remove the deposit including a high dielectric constant film deposited on an inside of a processing chamber, by using a cleaning gas activated only by heat. The method includes the steps of: loading a substrate or a plurality of substrates into the processing chamber; performing processing to deposit the high dielectric constant film on the substrate by supplying processing gas into the processing chamber; unloading the processed substrate from the inside of the processing chamber; and cleaning the inside of the processing chamber by supplying a halide gas and an oxygen based gas into the processing chamber, and removing the deposit including the high dielectric constant film deposited on the inside of the processing chamber, and in the step of cleaning the inside of the processing chamber, the concentration of the oxygen based gas in the halide gas and the oxygen based gas is set to be less than 7%.