Thermal Interface Layer Through-Hole Structure for Package Cooling
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Solution Overview
Problem
The increasing heat generated by miniaturized and high-performance electronic products poses challenges in developing effective thermal management solutions, as existing technologies struggle to efficiently dissipate heat while maintaining device performance.
Innovation Solution
The implementation of a substrate with through-holes and thermal interface material layers, where the thermal interface material fills portions of the through-holes and contacts semiconductor packages, enhancing heat dissipation by exposing side surfaces of the material layers to empty spaces and increasing contact area with semiconductor packages.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If thermal interface material is applied only on top surfaces of semiconductor packages, then application process is simple, but contact area is insufficient and heat dissipation is limited
Solution Approach 1:
The patent extends the thermal interface material application from two-dimensional top surface coverage to three-dimensional coverage including side surfaces through through-holes. The material is applied through vertical through-holes in the heat dissipation plate, allowing it to contact both the top surface and side surfaces of the semiconductor packages, effectively adding a vertical dimension to the thermal interface.
Solution Approach 2:
The heat dissipation plate incorporates through-holes that create a porous structure, allowing the thermal interface material to penetrate and contact the semiconductor packages at multiple locations. This porous approach increases the effective contact area between the thermal material and the semiconductor packages while maintaining structural integrity.
2Temperature
If through-holes are added to increase contact area, then heat dissipation improves, but device structure becomes more complex
Solution Approach 1:
The through-holes in the heat dissipation plate serve multiple functions simultaneously: they provide structural support, enable thermal interface material application, facilitate heat dissipation pathways, and allow for precise positioning of semiconductor packages. This multi-functionality reduces the need for separate components, thereby limiting the increase in overall device complexity.
Solution Approach 2:
The heat dissipation plate is segmented into multiple regions with through-holes distributed across its surface. Each through-hole acts as an independent thermal management unit that can be optimized individually, while collectively they provide comprehensive heat dissipation coverage without requiring a completely redesigned complex structure.
3Area of stationary object
If thermal interface material fills through-holes completely, then contact area increases, but material usage and manufacturing complexity increase
Solution Approach 1:
The thermal interface material is applied to fill the through-holes partially rather than completely. The material is deposited through the through-holes to contact the semiconductor packages at the required locations, and excess material is removed or allowed to overflow. This partial filling approach achieves sufficient thermal contact area without the complexity of precise complete filling.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves heat dissipation characteristics by stabilizing the thermal interface material layers and increasing contact area, thereby enhancing the thermal management capabilities of electronic devices.
Implementation Method 1
a first thermal interface material layer disposed between the first semiconductor package and the first plate, contacting an upper surface of the first semiconductor package and the first internal surface of the first plate
Data Source
AI summary
An electronic device includes a substrate, a first plate having a first internal surface facing a first surface of the substrate, and at least one first through-hole and at least one second through-hole, first and second semiconductor packages spaced apart from each other between the first surface and the first internal surface, a first thermal interface material layer contacting an upper surface of the first semiconductor package and the first internal surface, and filling at least a portion of the at least one first through-hole, and a second thermal interface material layer contacting an upper surface of the second semiconductor package and the first internal surface, and filling at least a portion of the at least one second through-hole. At least one of side surfaces of the first and second thermal interface material layers is exposed to an empty space between the first internal surface and the first surface.


