Thermally Conductive Interposer Using SiC or Diamond for Heat Transfer
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Solution Overview
Problem
Current microelectronics interposers and printed circuit boards exhibit poor thermal conductivity and mechanical integrity, leading to inefficiencies in heat transfer and manufacturing challenges due to their material properties, such as glass, silicon, and fiberglass impregnated with epoxy.
Innovation Solution
A thermally conductive interposer with a substrate material having a Young's Modulus greater than 200 GPa and thermal conductivity greater than 2 W/cm-K, made from materials like silicon carbide (SiC) or diamond, which is electrically nonconductive and suitable for integrating device components within microelectronic devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If traditional interposer materials (glass, silicon, fiberglass with epoxy) are used, then electrical connection is achieved, but thermal conductivity is poor
Solution Approach 1:
The patent changes the material parameters by selecting substrates with specific thermal conductivity thresholds (>2 W/cm-K) and Young's Modulus values (>200 GPa). This parameter-based material selection resolves the contradiction by identifying materials that simultaneously satisfy both thermal performance and mechanical reliability requirements, moving away from traditional low-conductivity materials like glass and epoxy-fiberglass composites.
Solution Approach 2:
The patent employs composite material strategies by considering substrates that combine high thermal conductivity with electrical non-conductivity and high mechanical strength. The use of materials like diamond or silicon carbide represents composite or advanced material solutions that integrate multiple desirable properties (thermal conductivity, mechanical strength, electrical insulation) into a single substrate system, resolving the trade-off between thermal performance and reliability.
2Reliability
If silicon-based interposers are used, then electrical connection is achieved, but mechanical integrity requires complex stress reduction measures
Solution Approach 1:
The patent resolves the mechanical complexity issue by changing the material selection parameters to substrates with Young's Modulus greater than 200 GPa. This parameter threshold ensures high mechanical strength and stress resistance inherent to the material, eliminating the need for additional complex stress reduction structures or processes that would otherwise be required with silicon-based interposers.
3Temperature
If thermally conductive materials are used, then heat transfer is improved, but electrical conductivity may increase (parasitic capacitance)
Solution Approach 1:
The patent applies local quality by requiring the substrate material to possess differentiated properties: high thermal conductivity for heat transfer while maintaining electrical non-conductivity. This localized property specification (thermal conductivity >2 W/cm-K combined with electrical insulation) allows the substrate to perform thermal management functions without generating parasitic capacitance, resolving the contradiction between thermal performance and electrical harm reduction.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The interposer effectively transfers heat between device components while maintaining mechanical robustness, reducing stress and strain, and enabling cost-effective high thermal conductivity without increasing parasitic capacitances, thus improving thermal management in microelectronics.
Implementation Method 1
the interposer substrate is configured to transfer heat between the first device component and the second device component
Data Source
AI summary
A thermally conductive interposer includes an interposer substrate having a first substrate surface and a second substrate surface. The first substrate surface being configured to be attached to a first device component. The second substrate surface being configured to be attached to a second device component. The interposer substrate being configured to support the second device component on the first device component and integrate the first device component and the second device component within a microelectronic device. Further, the interposer substrate is configured to transfer heat between the first device component and the second device component; and the interposer substrate is configured to be electrically nonconductive.