Thermal Dissipation Layer Layout for 3D IC Heat Spreading
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Solution Overview
Problem
The increasing complexity and heat generation in semiconductor devices, particularly in 3D ICs, pose challenges for effective thermal dissipation, leading to performance degradation.
Innovation Solution
Incorporating thermal dissipation layers, such as diamond-like carbon, and a bonding layer like AlN, which provides high thermal conductivity and planarity, to enhance heat spreading and management within the semiconductor structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If semiconductor devices are scaled down to improve production efficiency and lower costs, then productivity increases, but thermal dissipation becomes more difficult and device performance degrades
Solution Approach 1:
The patent introduces a thermal dissipation layer extending laterally beyond the interconnect structure in the horizontal dimension. This lateral extension creates additional thermal conduction pathways that spread heat away from the hot spot region, effectively increasing the thermal dissipation capacity without changing the vertical device structure or scaling dimensions.
Solution Approach 2:
The patent employs a thermal dissipation layer as an intermediary material between the heat-generating interconnect structure and the surrounding environment. This intermediate layer with high thermal conductivity acts as a thermal conduit, facilitating heat transfer from the compact scaled-down device regions to larger areas for dissipation.
2Adaptability or versatility
If multi-die stacked configuration is used to increase device functionality, then adaptability improves, but thermal dissipation paths are limited
Solution Approach 1:
The patent segments the thermal management function by introducing a dedicated thermal dissipation layer separate from the structural and electrical interconnect layers. This segmented approach allows the thermal dissipation function to be optimized independently within each die of the stacked configuration, with lateral heat spreading in each layer complementing the vertical stacking architecture.
3Temperature
If thermal dissipation layer with rough surface is formed to enhance heat spreading, then thermal conductivity improves, but bonding layer deposition becomes more difficult
Solution Approach 1:
The patent performs planarization of the thermal dissipation layer surface before depositing the bonding layer. This preliminary action removes the surface roughness that would otherwise interfere with subsequent bonding layer deposition, ensuring proper adhesion and uniform thickness of the bonding layer while preserving the underlying thermal dissipation structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The implementation of thermal dissipation layers and bonding layers improves thermal conductivity between die in 3D ICs, effectively managing heat and enhancing the performance and reliability of semiconductor devices.
Implementation Method 1
Incorporating thermal dissipation layers, such as diamond-like carbon, and a bonding layer like AlN, which provides high thermal conductivity and planarity, to enhance heat spreading and management within the semiconductor structure
Data Source
AI summary
One aspect of the present disclosure pertains to an integrated circuit (IC) structure and method of fabricating thereof. The IC structure includes a transistor device formed on a substrate where the transistor device having source/drain (S/D) regions and a gate structure. A multi-layer interconnect (MLI) structure including metal lines and metal vias embedded in an intermetal dielectric (IMD) layer is formed over the substrate. And a thermal dissipation layer is formed having a surface with a plurality of peaks and valleys disposed over at least a portion of the MLI structure. A bonding layer is disposed over the thermal dissipation layer and covering the plurality of peaks and valleys.