Semiconductor Package Thermal Interface and Lid for Warpage Control
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Solution Overview
Problem
High-level integration of processing systems and antennas in semiconductor devices leads to increased heat generation and poor heat dissipation, causing package warpage and functional harm due to higher interface pin-counts and reduced thickness.
Innovation Solution
A semiconductor device design incorporating a substrate with electronic components, an encapsulant, a shielding layer, a thermal interface layer, and a metal lid to manage heat effectively, where the thermal interface layer enhances heat transfer and the metal lid facilitates efficient heat dissipation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If high-level integration is implemented to meet consumer needs for smaller devices with more functional modules, then device functionality and integration density are improved, but heat generation increases and heat dissipation becomes less effective
Solution Approach 1:
The patent segments the package structure into distinct functional layers: a first package cavity for electronic components, a second package cavity for heat dissipation structures, and intermediate heat dissipation layers. This segmentation allows independent optimization of integration density in the first cavity and heat dissipation efficiency in the second cavity, resolving the contradiction between high integration and effective heat management.
Solution Approach 2:
The patent introduces intermediate heat dissipation layers (including heat dissipation plates and heat dissipation fins) as mediators between the electronic components and the external environment. These intermediary structures facilitate efficient heat transfer from the high-density electronic components to the surrounding air, enabling both high integration density and effective heat dissipation to coexist.
2Volume of moving object
If multiple electronic components are integrated in a smaller package, then device size is reduced, but heat dissipation effectiveness deteriorates
Solution Approach 1:
The patent transitions from two-dimensional planar heat dissipation to three-dimensional heat dissipation by introducing vertical heat dissipation structures (heat dissipation fins extending upward from the heat dissipation plate). This dimensional change increases the heat dissipation surface area within the limited package volume, enabling effective heat dissipation despite the small package size and high component density.
3Reliability
If heat accumulates within the package due to poor heat dissipation, then package warpage occurs and system function is harmed, but reducing integration density would increase device size
Solution Approach 1:
The patent implements preliminary heat dissipation actions by pre-configuring heat dissipation plates, heat dissipation fins, and heat dissipation cavities within the package structure before the electronic components generate excessive heat. This preliminary heat dissipation infrastructure prevents heat accumulation and package warpage from occurring, allowing high integration density to be maintained without compromising package stability or system function.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces thermal boundary resistance and maintains electronic components at lower operating temperatures, reducing power consumption and preventing overheating-related degradation.
Implementation Method 1
a thermal interface layer formed on the shielding layer
Implementation Method 2
a metal lid formed on the thermal interface layer
Data Source
AI summary
A semiconductor device comprises a substrate, at least one electronic component mounted on the substrate, an encapsulant formed on the substrate and at least partially encapsulating the at least one electronic component, a shielding layer formed on the encapsulant, a thermal interface layer formed on the shielding layer, and a metal lid formed on the thermal interface layer.