Thermal Management Material for Semiconductor Devices
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Solution Overview
Problem
Semiconductor devices often experience temperature increases during operation due to high energetic short-time pulses or prolonged use, which can lead to damage, and existing technologies lack effective methods to manage and reduce thermal stress.
Innovation Solution
Incorporating a material with molecules that can absorb thermal energy by reversibly changing their spatial molecular structure, allowing for temporary storage and release of thermal energy, which can be integrated into various components of semiconductor devices such as passivation, encapsulation, or redistribution layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If semiconductor devices operate during high energetic short-time pulses or prolonged use, then device functionality is maintained, but temperature increases causing thermal stress and potential damage
Solution Approach 1:
The patent applies the principle of converting harmful thermal energy into beneficial stored energy. The material absorbs excess thermal energy generated during high energetic short-time pulses or prolonged use and stores it temporarily through reversible molecular structure changes. This converts the harmful heat that would cause damage into stored energy that can be released later, thereby protecting the semiconductor device from thermal stress while maintaining operational reliability
Solution Approach 2:
The patent utilizes parameter changes by employing a material whose molecular structure can reversibly change in response to temperature variations. When the semiconductor device heats up, the material's molecules undergo structural changes to absorb thermal energy. When the device cools down, the molecules return to their original structure, releasing the stored energy. This dynamic parameter change allows the material to actively respond to and manage thermal fluctuations, preventing damage while maintaining device functionality
2Object-affected harmful factors
If thermal energy is absorbed to reduce temperature, then thermal stress damage is prevented, but device performance may be affected by temperature fluctuations
Solution Approach 1:
The patent employs phase transitions through reversible molecular structure changes in the integrated material. When thermal stress occurs, the material undergoes a phase transition at the molecular level, changing its spatial structure to absorb excess thermal energy. This phase transition acts as a buffer that prevents thermal stress damage while maintaining overall device performance stability, as the transition is reversible and the material returns to its original state when cooling occurs
Solution Approach 2:
The patent introduces an intermediary material that mediates between the semiconductor device and the external environment. This material absorbs and releases thermal energy in a controlled manner, acting as a buffer that smooths out temperature fluctuations. By serving as an intermediary thermal management layer, it protects the device from direct thermal stress while maintaining stable operating conditions, thereby preventing damage without compromising performance stability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables semiconductor devices to operate at lower temperatures, reducing the risk of damage from thermal stress and maintaining performance by effectively managing thermal energy fluctuations.
Implementation Method 1
a material including molecules that are configured to absorb thermal energy by reversibly changing a spatial molecular structure of the molecules
Data Source
AI summary
A semiconductor device includes a semiconductor chip and a first material including molecules that are configured to absorb thermal energy by reversibly changing a spatial molecular structure of the molecules.