Thermal Path Structures in 3D Memory Stacks
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Solution Overview
Problem
As semiconductor devices downscale and operate at increased speeds, effective thermal dissipation becomes a critical issue affecting their performance, particularly in highly integrated packaging where existing solutions fail to adequately manage heat generated.
Innovation Solution
The implementation of a memory device structure that incorporates thermally conductive walls and vias within a multi-tiered packaging design, where thermally conductive materials like copper or silver paste are used to form walls and vias, and encapsulants with lower thermal conductivity are used to enhance heat dissipation by creating thermal paths that guide heat away from the semiconductor chips.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If semiconductor devices are downscaled and operated at increased speeds, then operation speed and integration density are improved, but thermal dissipation capability deteriorates
Solution Approach 1:
The patent divides the packaging structure into multiple tiers with distinct thermal management functions. Through-silicon vias (TSVs) are segmented into multiple layers, and thermal path structures are distributed across different tiers to create a hierarchical thermal dissipation system that effectively manages heat from high-density, high-speed semiconductor devices.
Solution Approach 2:
The patent introduces thermal path structures as intermediary elements between the semiconductor chips and external cooling mechanisms. These thermal paths act as mediators to facilitate heat transfer from the chips through the packaging structure to external heat sinks, solving the thermal dissipation problem while maintaining high integration density.
2Productivity
If highly integrated packaging is implemented, then device integration density is improved, but thermal resistance increases
Solution Approach 1:
The patent transitions from planar thermal management to three-dimensional thermal paths by implementing vertical TSVs and multi-tier thermal conduction structures. This dimensional change allows heat to be dissipated through the depth of the packaging structure, reducing thermal resistance while maintaining high integration density on the chip surface.
Solution Approach 2:
The patent employs composite packaging structures combining different materials with complementary thermal properties. The packaging includes materials with high thermal conductivity for thermal paths and materials with appropriate mechanical and electrical properties for insulation and structural support, creating a composite system that simultaneously achieves high integration density and low thermal resistance.
3Temperature
If thermally conductive walls and vias are added to manage heat, then thermal dissipation is improved, but device complexity increases
Solution Approach 1:
The patent designs TSVs and interconnection structures to serve multiple functions simultaneously. The same vertical structures that provide electrical interconnection between tiers also function as thermal conduction paths. This multi-functionality reduces the need for separate thermal management components, thereby limiting the increase in device complexity while still achieving improved thermal dissipation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly reduces thermal resistance by up to 43%, enhancing the reliability and performance of memory devices by effectively managing heat dissipation across multiple tiers and external cooling mechanisms.
Implementation Method 1
thermally conductive materials like copper or silver paste are used to form walls and vias, and encapsulants with lower thermal conductivity are used to enhance heat dissipation by creating thermal paths that guide heat away from the semiconductor chips
Data Source
AI summary
A memory device including a base chip and a memory cube mounted on and connected with the base chip is described. The memory cube includes multiple stacked tiers, and each tier of the multiple stacked tiers includes semiconductor chips laterally wrapped by an encapsulant and a redistribution structure. The semiconductor chips of the multiple stacked tiers are electrically connected with the base chip through the redistribution structures in the multiple stacked tiers. The memory cube includes a thermal path structure extending through the multiple stacked tiers and connected to the base chip. The thermal path structure has a thermal conductivity larger than that of the encapsulant. The thermal path structure is electrically isolated from the semiconductor chips in the multiple stacked tiers and the base chip.