Thermally Decomposable Patterning for Low-Damage Semiconductor Etching
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Solution Overview
Problem
Current semiconductor manufacturing processes face challenges in accurately forming patterns and reducing etch damage due to the complexity of semiconductor device structures, which affects yield and process reliability.
Innovation Solution
The use of a thermally decomposable layer is introduced, allowing for precise pattern formation by thermal decomposition without damaging surrounding structures, and the implementation of a semiconductor manufacturing apparatus with dedicated chambers for layer deposition, annealing, and capping layer formation to streamline the process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional etching methods are used to form patterns, then pattern formation can be achieved, but etch damage occurs and manufacturing precision deteriorates
Solution Approach 1:
The patent extracts the harmful etching process from the pattern formation sequence by introducing a thermally decomposable layer that can be removed by thermal decomposition instead of etching. This separates the pattern definition function from the material removal process, eliminating etch damage while maintaining pattern formation accuracy.
Solution Approach 2:
The patent changes the removal mechanism from chemical etching to thermal decomposition by using a thermally decomposable layer with specific thermal decomposition characteristics. This parameter change in the removal process eliminates etch damage while preserving the underlying substrate and surrounding structures.
2Manufacturing precision
If complex multi-step processes are used to form precise patterns, then pattern accuracy improves, but device complexity and process time increase
Solution Approach 1:
The patent combines multiple functions into the thermally decomposable layer: it serves as a sacrificial layer, a spacer layer, and a pattern definition layer simultaneously. This merging reduces the number of separate process steps needed to achieve precise pattern formation, thereby reducing overall process complexity.
Solution Approach 2:
The thermally decomposable layer is formed in advance with predetermined thickness and positioning before subsequent processing steps. This preliminary action establishes the pattern geometry early in the process, allowing later steps to proceed more simply without requiring complex alignment or multiple patterning operations.
3Productivity
If conventional sacrificial layers are used, then pattern formation is enabled, but additional etching steps are required increasing process time
Solution Approach 1:
The patent replaces the mechanical/chemical etching system with a thermal decomposition system. The thermally decomposable layer is removed by heating rather than chemical etching, eliminating the need for additional etching steps and associated process time while maintaining the sacrificial layer functionality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables accurate pattern formation, reduces etch damage, improves yield, and simplifies the manufacturing process by using thermal decomposition to remove the thermally decomposable layer, thereby enhancing the reliability and efficiency of semiconductor device production.
Implementation Method 1
removing the thermally decomposable patterns by a heating method
Implementation Method 2
a thermally decomposable layer deposition chamber connected to the transfer chamber and configured to deposit a thermally decomposable layer formed of a polymer by supplying a first monomer and a second monomer
Data Source
AI summary
Provided are a method of manufacturing a semiconductor device using a thermally decomposable layer, a semiconductor manufacturing apparatus, and the semiconductor device. The method includes forming an etch target layer on a substrate, forming thermally decomposable patterns spaced apart from each other on the etch target layer, forming a first mask pattern covering at least sidewalls of the thermally decomposable patterns, and removing the thermally decomposable patterns by a heating method to expose a sidewall of the first mask pattern.