Thermal Plate Temperature Correction for Etching Uniformity

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Solution Overview

Problem

Despite temperature correction efforts, variations in line widths of the resist pattern after etching treatment lead to inconsistencies in the formation of desired circuit patterns, resulting in failed pattern formation.

Innovation Solution

A method and apparatus for a thermal processing plate that measures and calculates temperature correction values for each region based on the states of the etching pattern, using first and second functions to adjust in-plane temperatures, ensuring uniformity of the etching pattern within the substrate.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Temperature

If temperature correction values are set to uniform the temperatures within the wafer, then temperature uniformity is improved, but line width uniformity of the resist pattern is not sufficiently achieved

Engineering Contradiction:
Improvetemperature uniformityVSAvoidline width uniformity
Core Design Contradiction:
TemperatureVSManufacturing precision

Solution Approach 1:

The patent implements a feedback mechanism where actual line width measurements from the resist pattern are fed back to adjust temperature correction values. The system measures actual line widths, compares them to target values, and iteratively refines temperature correction values to achieve both temperature uniformity and line width uniformity, resolving the contradiction between the two objectives.

Inventive Principle:
Principle #23Feedback

Solution Approach 2:

The patent changes the parameters used for temperature correction from direct temperature measurements to line width measurements of the resist pattern. By using line width as the feedback parameter, the system directly optimizes for the critical dimension control needed to achieve uniform line widths, rather than relying solely on temperature uniformity.

Inventive Principle:
Principle #35Parameter changes

2Temperature

If independent heaters are embedded in each region, then temperature control capability is improved, but device complexity increases

Engineering Contradiction:
Improvetemperature control capabilityVSAvoidthermal plate structure
Core Design Contradiction:
TemperatureVSDevice complexity

Solution Approach 1:

The patent merges multiple independent heater controls into a unified temperature correction system that uses line width measurement feedback. Instead of independently controlling each heater, the system integrates them into a coordinated control mechanism that adjusts temperature correction values based on overall line width uniformity requirements, reducing control complexity while maintaining regional temperature adjustment capability.

Inventive Principle:
Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach improves the uniformity of the etching pattern, enhancing the yield by accurately setting temperatures for each region of the thermal processing plate, thereby achieving consistent line widths and successful circuit pattern formation.

Implementation Method 1

The thermal plate incorporates a heater generating heat, for example, by power feeding

Methodology Applied
Scientific EffectJoule heating: Joule Heating

Implementation Method 2

the thermal plate is adjusted to a predetermined temperature by the heat generation by the heater

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Data Source

PatentUS7957828B2Temperature setting method for thermal processing plate, temperature setting apparatus for thermal processing plate, and computer-readable storage medium
Publication Date: 2011.06.07 TOKYO ELECTRON LTD
  • US7957828B2 patent drawing
  • US7957828B2 patent drawing
  • US7957828B2 patent drawing

AI summary

In the present invention, the line widths within a substrate of an etching pattern are measured for a substrate for which photolithography processing and an etching treatment thereafter have been finished. The line width measurement results are converted into the line widths of a resist pattern using relational expressions which have been obtained in advance. From the converted line widths of the resist pattern, coefficients of a polynomial function indicating variations within the substrate are calculated. Next, a function between line width correction amounts for the resist pattern and temperature correction values is used to calculate temperature correction values for the regions of the thermal plate to bring the coefficients of the polynomial function close to zero. Based on each of the calculated temperature correction values, the temperature for each of the regions is set.