Thermal Plate Temperature Correction for Etching Uniformity
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Solution Overview
Problem
Despite temperature correction efforts, variations in the final line widths of the resist pattern after etching treatment lead to inconsistencies in forming desired circuit patterns, affecting the uniformity of the etching pattern within a substrate.
Innovation Solution
A temperature setting method and apparatus for a thermal processing plate, which measures the states of the etching pattern post-processing, calculates temperature correction values using a function between correction amounts and temperature settings, and adjusts each region of the thermal processing plate to achieve uniformity in the etching pattern.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If temperature correction values are set to uniform the temperatures within the wafer on the thermal plate, then the temperature uniformity is improved, but the line width uniformity of the resist pattern is not sufficiently improved
Solution Approach 1:
The patent implements a feedback mechanism by measuring the actual line widths of resist patterns after exposure and using these measurements to calculate corrected temperature offset values. The system continuously monitors the relationship between thermal plate temperature and resulting line widths, adjusting temperature settings based on measured outcomes to achieve the target line width
Solution Approach 2:
The patent changes the temperature offset parameters for different regions of the thermal plate based on measured line width variations. By adjusting the temperature offset values in response to measured line width data, the system optimizes both temperature distribution and final pattern dimensions
2Measurement precision
If the average value of line widths is brought to the target value, then the average line width accuracy is improved, but the final etching pattern line width uniformity varies within the wafer
Solution Approach 1:
The patent applies different temperature offset corrections to different regions of the thermal plate rather than using a uniform correction. By dividing the thermal plate into multiple regions and applying location-specific temperature adjustments, the system addresses local variations in heat resistance and achieves uniform etching patterns across the entire wafer surface
3Temperature
If independent heaters are embedded in each region of the thermal plate, then the temperature control capability is improved, but the device complexity increases
Solution Approach 1:
The patent divides the thermal plate into multiple independent regions, each with its own temperature control capability. This segmentation allows independent adjustment of temperature in different areas to compensate for variations in heat resistance and achieve uniform processing across the wafer
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach increases the uniformity of the etching pattern within the substrate, improving the yield by ensuring consistent line widths and pattern formation.
Implementation Method 1
The thermal plate incorporates a heater generating heat, for example, by power feeding
Implementation Method 2
the thermal plate is adjusted to a predetermined temperature by the heat generation by the heater
Data Source
AI summary
A temperature setting method of the present invention includes the steps of: measuring states of an etching pattern within the substrate for a substrate for which a series of photolithography processing including thermal processing and an etching treatment thereafter have been finished; calculating temperature correction values for regions of a thermal processing plate from measurement result of the states of the etching pattern within the substrate using a function between correction amounts for the states of the etching pattern and the temperature correction values for the thermal processing plate; and setting the temperature for each of the regions of the thermal processing plate by each of the calculated temperature correction values.