Thermal Process Control via Film Thickness Metrology
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Solution Overview
Problem
Manual temperature adjustment in multi-zone thermal processors is error-prone and time-consuming, leading to inefficiencies in wafer manufacturing due to temperature-sensitive oxide deposition processes and heat conduction issues within the furnace tube.
Innovation Solution
A system comprising a thermal processor, metrology tool, and controller that analyzes film thickness measurements to adjust heating element temperature settings using a slope coefficient matrix and statistical process control, enabling automatic compensation for thermal conductivity changes between process runs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If manual temperature adjustment is performed between process runs, then temperature deviation due to deposition on furnace wall can be compensated, but the process is mistake-prone and time-consuming
Solution Approach 1:
The system automatically measures film thickness using a metrology tool and adjusts temperature settings based on measured data, eliminating the need for manual intervention. The controller autonomously compensates for heating efficiency loss by modifying heating model parameters according to actual deposition conditions.
Solution Approach 2:
The system implements a closed-loop feedback mechanism where film thickness measurements from the metrology tool are fed back to the controller, which then adjusts temperature settings for subsequent process runs. This continuous measurement-adjustment cycle ensures accurate temperature control while eliminating manual operations.
2Reliability
If manual temperature adjustment is performed between process runs, then temperature deviation due to deposition on furnace wall can be compensated, but the process is error-prone and time-consuming
Solution Approach 1:
The system performs automatic temperature compensation through integrated metrology and control functions, eliminating manual intervention and its associated errors. The controller autonomously processes measurement data and adjusts heating parameters, ensuring consistent temperature control across process runs.
Solution Approach 2:
The patent replaces manual mechanical adjustment operations with an automated electronic control system. The metrology tool provides precise film thickness measurements, and the controller automatically translates these measurements into temperature setting adjustments, eliminating human error and increasing manufacturing efficiency.
3Productivity
If automated temperature control is implemented, then adjustment time and errors are eliminated, but system complexity increases
Solution Approach 1:
The controller serves multiple functions: it manages the heating model, processes metrology data, performs statistical process control analysis, and automatically adjusts temperature settings. The metrology tool is integrated into the existing thermal processing system, allowing a single system to perform both processing and measurement functions.
Solution Approach 2:
The patent introduces a controller as an intermediary between the metrology tool and the thermal processing system. This controller acts as a mediator that receives film thickness measurements, processes them through statistical analysis using a heating model, and translates results into appropriate temperature adjustments, thereby managing system complexity through structured information flow.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for precise, automated temperature control, reducing manufacturing costs and improving heating efficiency by dynamically adjusting temperature settings based on measured film thickness and thermal conductivity changes.
Implementation Method 1
The deposited material on the inner wall hinders heat conduction and lowers the heating efficiency
Implementation Method 2
A multi-zone thermal processor, such as a furnace, is widely used in semiconductor manufacturing
Implementation Method 3
an oxide layer is thermally grown or deposited on the surface of a wafer... The deposition of the oxide layer is controlled and limited by the reaction of oxygen and silicon
Data Source
AI summary
A thermal process system. The thermal process system comprises a thermal processor, a metrology tool, and a controller. The thermal processor performs a thermal process as defined by a heating model to form a film on a wafer surface. The metrology tool, interfaced with the thermal processor, inspects thickness of the film. The controller, coupled with the thermal processor and the metrology tool, generates the heating model of the thermal processor and calibrates the heating model according to a preset slope coefficient matrix and the measured thickness.