Thermal Isolation Shield for Faster GIS Manipulator Deposition
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Solution Overview
Problem
Existing charged particle beam enhanced deposition techniques, such as focused ion beam enhanced deposition, face limitations in deposition rate and throughput, particularly when applied to semiconductor wafers.
Innovation Solution
The implementation of a system and method that includes a thermal isolation shield with high thermal conductivity and low emissivity, positioned between the gas injection system and the sample, to reduce heat radiation and increase the deposition rate by maintaining a lower sample surface temperature.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the gas injection system is heated to prevent condensation, then condensation in the gas delivery system is prevented, but heat radiation to the sample increases and reduces deposition rate
Solution Approach 1:
A thermal shield made of highly reflective material (such as aluminum or silver coating) is positioned between the heated gas injection system and the sample. This intermediary reflects thermal radiation away from the sample, allowing the gas system to remain heated for condensation prevention while protecting the sample from heat-induced reduction in deposition rate. The shield acts as a thermal barrier that selectively blocks harmful radiation while permitting gas flow.
Solution Approach 2:
The thermal shield is strategically positioned to provide localized thermal protection only to the sample area, while the gas injection system maintains its heated state elsewhere. This localized approach allows different regions of the system to have different thermal conditions: the gas delivery path remains warm to prevent condensation, while the sample region remains cool to maintain high deposition rate through optimal sticking coefficient.
2Speed
If the deposition temperature is increased to improve gas phase transport, then material transport to the sample is enhanced, but the sticking coefficient decreases and deposition rate reduces
Solution Approach 1:
The system implements spatially differentiated temperature zones: the gas delivery region is heated to enhance vapor pressure and material transport from the source, while the sample region is kept cool to maintain high sticking coefficient. This is achieved through the thermal shield that creates a temperature gradient, allowing optimal conditions in each region for their respective functions.
Solution Approach 2:
The deposition chamber is effectively segmented into distinct thermal zones by the thermal shield. The upstream region (gas injection side) operates at elevated temperature for improved material transport, while the downstream region (sample side) operates at lower temperature for high deposition efficiency. This segmentation allows independent optimization of transport and deposition processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly enhances the deposition rate and throughput of charged particle beam enhanced deposition processes, particularly on semiconductor wafers, by minimizing heat-induced decreases in the sticking coefficient of deposition gases.
Implementation Method 1
a thermal isolation shield spaced apart from and disposed between the gas injection system and the sample, wherein the thermal isolation shield has a high thermal conductivity and a low emissivity and is thermally coupled to the thermal mass to transfer heat radiated from the gas injection system to the thermal mass
Implementation Method 2
the thermal isolation shield has a high thermal conductivity and a low emissivity
Implementation Method 3
As the ion beam is scanned across a region of the sample, the energy released by the collision cascade of the bombarding ions causes dissociation of the surface-adsorbed precursor molecules
Implementation Method 4
During a FIB-enhanced deposition process, molecules of the injected gas adhere to a surface of the sample
Data Source
AI summary
A system for depositing material over a sample in a localized region of the sample, the system including: a vacuum chamber; a thermal mass disposed outside the vacuum chamber; a sample support configured to hold a sample within the vacuum chamber during a sample evaluation process; a charged particle beam column configured to direct a charged particle beam into the vacuum chamber toward the sample such that the charged particle beam collides with the sample in a deposition region; a gas injection system configured to deliver a process gas to the deposition region of the sample; and a thermal isolation shield spaced apart from and disposed between the gas injection system and the sample, wherein the thermal isolation shield has a high thermal conductivity and a low emissivity and is thermally coupled to the thermal mass to transfer heat radiated from the gas injection system to the thermal mass.