Thermal Transistor Modulating Interfacial Resistance

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Interfacial thermal resistance in thermal logical devices is difficult to effectively control, hindering the regulation of thermal flow and functionality.

Innovation Solution

A method involving a metallic thermal conductor and a non-metallic thermal conductor in direct contact, with the application of an electric field to modulate interfacial thermal resistance, utilizing carbon nanotubes and a thermal resistance adjusting unit to control heat transfer by varying the electric field or bias voltage.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If interfacial thermal resistance is regulated to achieve thermal rectification, then thermal logical device functionality is improved, but the interfacial thermal resistance cannot be effectively controlled

Engineering Contradiction:
Improvethermal rectification capabilityVSAvoidcontrollability of interfacial thermal resistance
Core Design Contradiction:
Adaptability or versatilityVSEase of operation

Solution Approach 1:

The patent changes the physical state of the phase change material (PCM) between solid and liquid phases to dynamically regulate interfacial thermal resistance. When PCM melts from solid to liquid, the interfacial thermal resistance decreases, enabling thermal flow; when PCM solidifies, resistance increases, blocking thermal flow. This parameter change resolves the contradiction by providing effective control over thermal resistance through temperature-driven phase transitions.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent introduces a dynamic control mechanism using phase change material that can transition between solid and liquid states based on temperature. This dynamic state change allows the thermal transistor to actively modulate interfacial thermal resistance, transforming a static interface into a controllable dynamic element that can switch thermal conductivity on and off, thereby achieving both thermal rectification and effective control.

Inventive Principle:
Principle #15Dynamics

2Manufacturing precision

If thermal transistor is fabricated with phase change material, then precise control of thermal flow is achieved, but device structure complexity increases

Engineering Contradiction:
Improveprecision of thermal flow controlVSAvoidstructure complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent embeds the phase change material within the thermal transistor structure, nesting the PCM between the heat source and heat sink regions. This nested configuration allows the PCM to directly modulate thermal flow through the device without requiring external control mechanisms, achieving precise thermal flow control while minimizing structural complexity by integrating the control function within the device itself.

Inventive Principle:
Principle #7Nested doll (Nesting)

Solution Approach 2:

The phase change material serves itself by automatically transitioning between solid and liquid phases in response to temperature changes, thereby self-regulating the interfacial thermal resistance. This self-service mechanism eliminates the need for external actuators or complex control systems, achieving precise thermal flow control through the intrinsic thermodynamic properties of the PCM while keeping the device structure relatively simple.

Inventive Principle:
Principle #25Self-service

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables precise control of interfacial thermal resistance, enhancing thermal rectification capabilities and facilitating the fabrication of thermal transistors and logical devices.

Implementation Method 1

varying an electric field at the interface to modulate the interfacial thermal resistance at the interface

Methodology Applied
Scientific EffectElectric Field: Electric Field

Implementation Method 2

Interfacial thermal resistance is a measure of an interface's resistance to thermal flow

Methodology Applied
Scientific EffectThermal Resistance: Conduction (thermal)

Implementation Method 3

a carbon nanotube film... wherein the carbon nanotube film is between the metallic thermal conductor and the non-metallic thermal conductor

Methodology Applied
Scientific EffectThermal Conduction: Conduction (thermal)

Data Source

PatentUS10859329B2Thermal transistor
Publication Date: 2020.12.08 HON HAI PRECISION INDUSTRY CO LTD
  • US10859329B2 patent drawing
  • US10859329B2 patent drawing
  • US10859329B2 patent drawing

AI summary

A thermal transistor is provided. The thermal transistor includes a metallic thermal conductor, a non-metallic thermal conductor, and a thermal resistance adjusting unit. The metallic thermal conductor and the non-metallic thermal conductor are contact with each other to form a thermal interface. The thermal resistance adjusting unit is configured to generate an electric field at the thermal interface.