Thermally Conductive Via Block for Semiconductor Heat Dissipation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional semiconductor devices face challenges in heat dissipation due to tight integration of electronic components, leading to performance degradation.
Innovation Solution
A semiconductor device is designed with a thermally conductive block comprising a base material block and an array of thermally conductive vias, along with a heat spreader to enhance heat dissipation, using a method that includes forming a photoresist layer, patterning with ultraviolet-proof particles, and etching to create vertical holes for thermally conductive vias.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If electronic components are tightly integrated to meet consumer needs for smaller and higher performance devices, then device functionality and performance are improved, but heat dissipation deteriorates due to blocked heat pathways
Solution Approach 1:
The patent divides the heat dissipation function into multiple segments by creating an array of vertical holes filled with thermally conductive material. This segmented approach allows heat to be dissipated through multiple parallel pathways rather than a single blocked pathway, resolving the contradiction between tight integration and heat dissipation.
Solution Approach 2:
The patent introduces vertical heat dissipation pathways by etching holes through the substrate thickness direction. This adds a third dimension (vertical) to heat dissipation, allowing heat to escape through the substrate rather than being blocked in the horizontal plane by tightly integrated components.
2Ease of manufacture
If conventional photoresist patterning is used without ultraviolet-proof particles, then manufacturing process is simpler, but patterning precision deteriorates due to ultraviolet light exposure affecting the photoresist
Solution Approach 1:
The patent introduces ultraviolet-proof particles as an intermediary layer between the ultraviolet light source and the photoresist. These particles act as a mask that selectively blocks ultraviolet light, enabling precise patterning without requiring complex conventional photolithography processes.
Solution Approach 2:
The patent replaces the complex conventional photolithography system with a simpler direct-write approach using ultraviolet-proof particles. Instead of using complex light masks and exposure systems, the invention uses physically deposited particles to define the pattern, simplifying the manufacturing process while maintaining precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design significantly improves thermal conductivity and maintains thermal expansion characteristics, effectively dissipating heat generated by semiconductor dice.
Implementation Method 1
forming ultraviolet-proof particles on the photoresist layer; patterning the photoresist layer through the ultraviolet-proof particles
Implementation Method 2
filling in the array of vertical holes a thermally conductive material to form an array of thermally conductive vias; the array of thermally conductive vias and the base material block constitute a thermally conductive block
Data Source
AI summary
A method for forming a semiconductor device is provided. The method includes providing a base material block; forming a photoresist layer; forming ultraviolet-proof particles; patterning the photoresist layer through the ultraviolet-proof particles; etching the base material block through the patterned photoresist layer to form an array of vertical holes; filling in the array of vertical holes a thermally conductive material to form an array of thermally conductive vias, wherein the array of thermally conductive vias and the base material block constitute a thermally conductive block; providing a semiconductor die stack with a primary semiconductor die and an auxiliary semiconductor die, wherein the primary semiconductor die comprises a top surface having a first region and a second region besides the first region, wherein the auxiliary semiconductor die is attached onto the first region; attaching the thermally conductive block on the second region; and attaching a heat spreader.


