Thermally Conductive Layer for Semiconductor Heat Dissipation

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Solution Overview

Problem

Microelectronics device packages face poor heat dissipation due to the low thermal conductivity of molding compounds, which can lead to localized overheating, chip cracking, and handling issues during processing.

Innovation Solution

A method involving the deposition of an insulating barrier layer and a thermally conductive layer with high thermal conductivity (3 W/m-K to 10 W/m-K) to encapsulate chips, providing an efficient heat dissipation path, replacing traditional molding compounds and preventing delamination during processing.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a traditional molding compound is used to encapsulate the wafer, then the wafer is protected and encapsulated, but the thermal conductivity is low (0.6-0.8 W/m-K) which hinders heat dissipation

Engineering Contradiction:
Improvewafer protectionVSAvoidheat dissipation
Core Design Contradiction:
ReliabilityVSTemperature

Solution Approach 1:

The patent uses a composite material consisting of a polymer matrix combined with thermally conductive fillers (such as aluminum oxide, aluminum nitride, or beryllium oxide particles) to create an encapsulant that provides both mechanical protection and enhanced thermal conductivity. This composite structure allows the material to simultaneously protect the wafer while efficiently conducting heat away from the semiconductor devices.

Inventive Principle:
Principle #40Composite materials

2Temperature

If a back-side grinding process is applied to reduce molding compound thickness for heat dissipation, then heat dissipation path is improved, but the molding compound becomes delaminated from the wafer

Engineering Contradiction:
Improveheat dissipationVSAvoidmolding compound adhesion
Core Design Contradiction:
TemperatureVSStability of the object's composition

Solution Approach 1:

The patent changes the material parameters of the encapsulant by incorporating thermally conductive fillers into the polymer matrix, thereby improving thermal conductivity without requiring reduction of the encapsulant thickness. This parameter change allows the full thickness of the encapsulant to be retained while still achieving effective heat dissipation, thus maintaining the structural integrity and adhesion of the molding compound to the wafer.

Inventive Principle:
Principle #35Parameter changes

3Temperature

If the molding compound thickness is reduced through grinding, then heat dissipation efficiency is improved, but chip edges become susceptible to cracking and chipping during dicing

Engineering Contradiction:
Improveheat dissipationVSAvoidchip edge strength
Core Design Contradiction:
TemperatureVSStrength

Solution Approach 1:

The patent employs a composite encapsulant material with enhanced thermal conductivity that allows the use of sufficient thickness to provide mechanical support and protection to the chip edges during dicing and handling, while simultaneously achieving effective heat dissipation. The composite structure provides both the mechanical strength needed for processing and the thermal conductivity needed for heat management.

Inventive Principle:
Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution effectively increases heat dissipation efficiency, reduces thermal resistance, and prevents chip damage by using a thermally conductive layer as a heat spreader, enhancing the reliability and performance of microelectronics devices.

Implementation Method 1

a thermally conductive layer is formed over the insulating barrier layer to at least partially encapsulate the at least one chip. The thermally conductive layer provides a thermally conductive path through which heat that is generated from the chip is dissipated to the ambient

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Data Source

PatentUS11658044B2Thermally conductive structure for heat dissipation in semiconductor packages
Publication Date: 2023.05.23 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US11658044B2 patent drawing
  • US11658044B2 patent drawing
  • US11658044B2 patent drawing

AI summary

A semiconductor package includes a wafer and at least one chip attached on first portions of an upper surface of the wafer. Further, the semiconductor package includes an insulating barrier layer, a thermally conductive layer, and a heat sink. The insulating barrier layer is arranged over the at least one chip attached on first portions of an upper surface of the wafer. The thermally conductive layer is arranged over the insulating barrier layer and at least partially encapsulates the at least one chip. The heat sink is arranged over the thermally conductive layer.