Thermoelectric Die Package Structure for Active Chip Cooling
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Solution Overview
Problem
The rapid increase in integration density of semiconductor devices leads to significant heat generation, which decreases device performance, and existing heat dissipation methods using metal vias are inefficient due to slow thermal conduction and limited cooling efficiency.
Innovation Solution
The use of thermoelectric devices comprising P-type and N-type semiconductor blocks connected in series with metal pads, which exploit the Peltier effect to actively absorb and release heat, providing a more efficient cooling mechanism by forming cold and hot junctions to manage temperature gradients.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If integration density of semiconductor devices is increased, then productivity and device capability are improved, but heat generation increases causing device temperature to rise and performance to degrade
Solution Approach 1:
The patent replaces traditional passive thermal conduction mechanisms (metal heat sinks and vias) with an active thermoelectric cooling system that uses electrical current to drive heat pumping. The thermoelectric device converts electrical energy into thermal energy transfer, actively removing heat from the semiconductor die rather than relying on passive heat diffusion.
Solution Approach 2:
The patent changes the thermal management approach from passive thermal conduction to active thermoelectric cooling by applying electrical current. This parameter change enables dynamic control of heat removal, allowing the system to adapt to varying heat generation levels and maintain optimal device temperature even as integration density increases.
2Loss of energy
If traditional metal heat sinks and metal vias are used for heat dissipation, then heat removal is attempted, but thermal conduction is slow and cooling efficiency is limited
Solution Approach 1:
The patent substitutes passive thermal conduction through metal materials with active thermoelectric heat pumping. Instead of relying on slow thermal diffusion through metal heat sinks and vias, the system uses thermoelectric devices that actively pump heat from the semiconductor die to the heat sink, dramatically improving heat removal efficiency and effective thermal transfer speed.
3Loss of energy
If traditional heat dissipation methods are used, then cooling is attempted, but significant vertical space is required for effective cooling structures
Solution Approach 1:
The patent integrates the thermoelectric cooling system directly onto the semiconductor die surface, nesting the cooling function within the existing device footprint. The thermoelectric device is positioned between the semiconductor die and heat sink, eliminating the need for separate, space-consuming cooling structures while maintaining effective heat dissipation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces the temperature of semiconductor devices, improving their performance by enhancing heat removal efficiency compared to traditional metal heat sinks, while also reducing the vertical space required for cooling.
Implementation Method 1
The thermoelectric structure includes a first thermoelectric device comprising a P-type semiconductor block, an N-type semiconductor block, and a metal pad between the P-type semiconductor block and the N-type semiconductor block. When a current flowing through one of the N-type semiconductor block, one of the metal pad, and one of the P-type semiconductor block in order, the metal pad between the N-type semiconductor block and the P-type semiconductor block forms a cold junction which absorbs heat generated by the semiconductor die. When a current flowing through one of the P-type semiconductor block, one of the metal pad, and one of the N-type semiconductor block in order, the metal pad between the P-type semiconductor block and the N-type semiconductor block forms a hot junction which releases the heat absorbed by the cold junction to environment.
Data Source
AI summary
A package structure is provided. The package structure includes a semiconductor die and a thermoelectric structure disposed on the semiconductor die. The thermoelectric structure includes P-type semiconductor blocks, N-type semiconductor blocks and metal pads. The P-type semiconductor blocks and the N-type semiconductor blocks are arranged in alternation with the metal pads connecting the P-type semiconductor blocks and the N-type semiconductor blocks. When a current flowing through one of the N-type semiconductor block, one of the metal pad, and one of the P-type semiconductor block in order, the metal pad between the N-type semiconductor block and the P-type semiconductor block forms a cold junction which absorbs heat generated by the semiconductor die.