Thin-Film Thermoelectric Generator Fabrication via Substrate Deposition
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Solution Overview
Problem
Current methods for fabricating thermo-electric generators are complex and inefficient, particularly in connecting P-type and N-type semiconductors, limiting the performance and applicability of thin-film thermo-electric generators.
Innovation Solution
A method involving the deposition of P-type and N-type thermo-electric thin-film layers on opposite sides of an insulating substrate, with the layers being connected on the exposed side to form a PN junction, eliminating the need for welding and simplifying the fabrication process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If P-type and N-type thermo-electric unit chips are separately manufactured and connected through welding, then the generator can be assembled, but the fabrication process becomes complex and welding is required in the heating surface side which affects performance at working temperature
Solution Approach 1:
The patent merges the P-type and N-type thermo-electric unit fabrication into a single integrated process. P-type and N-type thermo-electric thin film layers are deposited on opposite sides of the same insulating substrate, allowing both types to be manufactured together rather than separately. This eliminates the need for separate chip fabrication and subsequent welding assembly, directly resolving the contradiction between ease of manufacture and device complexity.
Solution Approach 2:
The insulating substrate serves as an intermediary that holds both P-type and N-type thermo-electric thin film layers during fabrication. By using the substrate as a mediator, the patent enables simultaneous deposition and integration of both material types without requiring complex alignment or welding processes, thereby simplifying the overall fabrication process.
2Reliability
If welding is used to connect P-type and N-type thermo-electric units, then the units can be joined, but the performance of the generator at heating surface working temperature is degraded
Solution Approach 1:
The patent replaces the mechanical welding connection system with a direct thin-film deposition system. Instead of using welding to join separate P-type and N-type chips, the invention deposits both types of thermo-electric materials as thin films on opposite sides of the insulating substrate, creating direct thermal and electrical contact without requiring high-temperature welding processes that would degrade performance at working temperature.
3Ease of operation
If the chip is stripped from the deposited thermo-electric units, then the units can be assembled, but the fabrication procedure becomes difficult and complex
Solution Approach 1:
The patent inverts the conventional fabrication sequence. Instead of depositing thermo-electric materials on a chip and then stripping the chip for assembly, the invention deposits both P-type and N-type thin film layers directly onto the insulating substrate that will serve as the final structural component. This inversion eliminates the need for chip stripping and reassembly operations, making the fabrication process easier and more straightforward.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the performance and simplifies the fabrication of thin-film thermo-electric generators, improving their efficiency and reducing costs, allowing for the production of generators with improved working temperature performance and enabling the connection of multiple units for increased voltage output.
Implementation Method 1
depositing a P-type thermo-electric thin-film layer on one side of the insulating substrate; depositing a N-type thermo-electric thin-film layer on the other side of the insulating substrate
Implementation Method 2
the heat energy is transformed into electric energy due to Seeback effect
Data Source
AI summary
For the present invention, a P-type thermo-electric thin-film layer and a N-type thermo-electric thin-film layer are respectively deposited on two sides of an insulating substrate. During the deposition, the P-type thermo-electric thin-film layer and the N-type thermo-electric thin-film layer are deposited and connected on the same exposed side of the insulating substrate, and then a PN junction is formed. This method makes the fabrication simplified without special process for connecting the P-type thermo-electric thin-film layer and the N-type thermo-electric thin-film layer. Due to the features of thin-film thermo-electric material, the performance of thermo-electric generator is improved. During the deposition, the P-type thermo-electric thin-film layer and the N-type thermo-electric thin-film layer are deposited and connected on the exposed side of the insulating substrate, so welding is not required in this heating surface side. The performance of thermo-electric generator fabricated in heating surface working temperature is accordingly greatly improved.