Thermoelectric Substrate Warpage Correction in Process Chambers
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Solution Overview
Problem
Conventional methods for thermal management of substrates during high-temperature processes in microchip manufacturing are inadequate, leading to defects, warpage, and device failure due to poor temperature control and vibration issues from moving parts.
Innovation Solution
A system utilizing thermoelectric modules (TEMs) in a process chamber with two processing volumes for precise temperature control, allowing for contactless warpage correction by heating and cooling substrates without moving parts, providing rapid and precise temperature management.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If conventional thermal management methods (compressors, cryopumps, chillers) are used to cool substrates, then cooling capability is provided, but the system has many moving parts causing rotational and vibrational issues, is relatively large, has long cooling periods, and does not provide adequate temperature control
Solution Approach 1:
The patent replaces conventional mechanical thermal management systems (compressors, cryopumps, chillers) with a thermoelectric module-based system. The thermoelectric modules convert electrical energy directly into thermal energy for heating or cooling, eliminating moving parts and their associated rotational and vibrational issues. This substitution provides precise temperature control through electrical regulation while reducing system size and cooling time.
2Temperature
If conventional thermal management methods are used, then cooling function is provided, but the system is relatively large and has extended cooling periods
Solution Approach 1:
The thermoelectric module system replaces large mechanical cooling systems with compact solid-state devices. These modules provide rapid heating and cooling response due to direct electrical-to-thermal energy conversion, significantly reducing cooling periods compared to conventional systems with moving parts and extended thermal mass.
3Ease of manufacture
If high temperature processes are used for microchip manufacturing, then chemical reactions are facilitated for substrate structure alteration and film growth, but substrate warpage occurs due to thermal expansion mismatch and stress levels
Solution Approach 1:
The patent employs real-time temperature monitoring and active control of the substrate during high-temperature processing. By dynamically adjusting the temperature parameters and maintaining uniform thermal distribution across the substrate, the system enables necessary chemical reactions while preventing warpage caused by thermal expansion mismatch and stress accumulation.
4Productivity
If temperature gradient across substrate is not controlled, then plastic deformation occurs causing pattern misregistration and device failure
Solution Approach 1:
The patent implements a feedback control system that monitors temperature distribution across the substrate in real-time and adjusts heating/cooling accordingly. This active feedback mechanism maintains uniform temperature gradients, preventing plastic deformation and ensuring pattern alignment accuracy while maintaining processing throughput.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The system effectively controls substrate temperature, preventing warpage and defects, ensuring accurate pattern alignment and device performance by eliminating rotational and vibrational issues associated with conventional methods.
Implementation Method 1
a first thermoelectric module (TEM) configured to heat or cool the substrate
Data Source
AI summary
Methods and apparatus for processing a substrate are provided herein. For example, a system for processing a substrate includes a process chamber comprising a first processing volume and a second processing volume, a carrier disposed in the first processing volume, comprising a first thermoelectric module (TEM), and configured to support the substrate while the substrate is being heated or cooled, a chuck disposed within the second processing volume, comprising a second TEM, and configured to receive the substrate from the carrier and to support the substrate while the substrate is being heated or cooled, and a system controller configured to monitor a temperature of at least one of the substrate, the carrier, or the chuck during operation, and based on the temperature of the at least one of the substrate, the carrier, or the chuck, supply current to at least one of the first TEM or the second TEM.