Thermoelectric Temperature Control for Semiconductor Waveguides
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Solution Overview
Problem
Existing semiconductor waveguide technologies face challenges in manipulating light using standard CMOS processing steps and require effective temperature control to stabilize optoelectronic device performance, which is often compromised by thermal effects from adjacent semiconductor devices.
Innovation Solution
A semiconductor waveguide integrated with a thermoelectric temperature control device that uses p-doped and n-doped semiconductor regions and a recessed metal semiconductor alloy portion to modulate light phase through the Peltier-Seebeck effect, allowing for temperature control of optoelectronic devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If optoelectronic devices are placed far away from conventional semiconductor devices to reduce thermal effects, then performance stability of optoelectronic devices is improved, but areal density of the semiconductor chip is reduced
Solution Approach 1:
A thermoelectric temperature control device is introduced as an intermediary between the optoelectronic device and the heat source. This device actively manages thermal effects, allowing the optoelectronic device to be positioned closer to other semiconductor devices while maintaining performance stability through active temperature control.
Solution Approach 2:
The invention changes the thermal parameter management approach by implementing active temperature control through thermoelectric devices. By dynamically adjusting temperature parameters rather than relying on fixed spatial separation, the system achieves both high areal density and performance stability.
2Adaptability or versatility
If exotic materials or special processing steps are used to manipulate light in semiconductor waveguide, then optical manipulation capability is improved, but manufacturing cost and processing complexity are increased
Solution Approach 1:
The patent employs standard CMOS processing steps to create structures that perform multiple functions: waveguide formation, phase modulation, and temperature control. By making the standard processing steps multi-functional, exotic materials and special processing steps are avoided while maintaining optical manipulation capability.
Solution Approach 2:
The invention achieves optical manipulation by changing physical parameters (temperature, refractive index) of standard semiconductor materials rather than introducing exotic materials. Phase modulation is accomplished through temperature-dependent refractive index changes in silicon, avoiding the need for specialized materials.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables phase modulation of light in the semiconductor waveguide and stable operation of optoelectronic devices by effectively managing temperature, thereby maintaining high areal density without thermal performance degradation.
Implementation Method 1
The diffusion of majority charge carriers in the doped semiconductor regions transfers heat from or into the semiconductor waveguide through Peltier-Seebeck effect
Implementation Method 2
The diffusion of majority charge carriers in the doped semiconductor regions transfers heat from or into the semiconductor waveguide through Peltier-Seebeck effect
Implementation Method 3
The temperature change in the semiconductor waveguide alters refractive index of the semiconductor waveguide, which may be employed to modulate the phase of the light passing through the semiconductor waveguide
Data Source
AI summary
Current may be passed through an n-doped semiconductor region, a recessed metal semiconductor alloy portion, and a p-doped semiconductor region so that the diffusion of majority charge carriers in the doped semiconductor regions transfers heat from or into the semiconductor waveguide through Peltier-Seebeck effect. Further, a temperature control device may be configured to include a metal semiconductor alloy region located in proximity to an optoelectronic device, a first semiconductor region having a p-type doping, and a second semiconductor region having an n-type doping. The temperature of the optoelectronic device may thus be controlled to stabilize the performance of the optoelectronic device.