Thermopile Mesh for High-Resolution SoC Temperature Mapping
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Solution Overview
Problem
Conventional smartphones face challenges in accurately measuring and mitigating SoC temperatures due to limited diode placement and dynamic hot spot locations, leading to crude peak temperature estimation and overly conservative performance throttling.
Innovation Solution
A thermopile mesh structure composed of two dissimilar conductive materials is placed over the active region of the SoC, using the Seebeck effect to measure voltage differences and provide high-spatial-resolution temperature mapping, allowing for more accurate hotspot detection and reduced thermal management errors.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If diode temperature sensors are located within the silicon active layer, then temperature detection is enabled, but the number of possible diodes is severely limited by active layer design constraints
Solution Approach 1:
The patent transitions from planar diode sensors within the active layer to three-dimensional thermocouple structures formed by intersecting conductive layers above and below the active region. This dimensional change enables multiple temperature sensing points without consuming active layer real estate, thereby increasing the number of sensors while maintaining design constraints.
Solution Approach 2:
The patent introduces thermocouple structures as intermediary elements that convert temperature information into voltage signals measurable by the controller. These thermocouples act as mediators between the physical temperature field and the electronic sensing system, enabling indirect but accurate temperature measurement without direct diode placement in the active layer.
2Measurement precision
If strategic diode placement is used to estimate peak temperature, then some temperature information is obtained, but the estimation is very crude because hot spot locations cannot be assumed
Solution Approach 1:
The patent divides the active region into multiple segments by placing thermocouple intersections at different locations. Each thermocouple measures temperature at its specific intersection point, collectively providing comprehensive coverage of potential hot spot locations. This segmentation approach replaces crude single-point estimation with distributed multi-point measurement.
Solution Approach 2:
The patent adds vertical dimension to temperature sensing by forming thermocouples with conductive layers above and below the active region. This three-dimensional arrangement enables temperature measurement at multiple depths and locations, providing adaptability to detect hot spots regardless of their horizontal or vertical position within the active region.
3Ease of manufacture
If conventional temperature sensing methods are used, then simple sensor implementation is achieved, but on-chip peak temperature estimation is very crude leading to overly-conservative performance throttling
Solution Approach 1:
The patent incorporates thermocouple structures into the semiconductor device fabrication process itself, forming the conductive layers and thermocouple intersections during standard manufacturing steps. This preliminary integration ensures accurate temperature sensing capability is built into the device structure before operation, enabling reliable peak temperature detection without adding complex post-fabrication sensor implementations.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The thermopile mesh structure enhances temperature sensing accuracy, enabling more precise hotspot characterization and performance optimization, improving device reliability and reducing thermal management costs.
Implementation Method 1
A thermopile mesh structure composed of two dissimilar conductive materials is placed over the active region of the SoC, using the Seebeck effect to measure voltage differences
Data Source
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AI summary
A semiconductor device may include a semiconductor die having an active region. The semiconductor device may also include a thermocouple mesh proximate to the active region. The thermocouple mesh may include a first set of wires of a first material extending in a first direction, and a second set of wires of a second material. The second material may be different from the first material. In addition, the second set of wires may extend in a second direction different than the first direction of the first wires.